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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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收录类别:CPCI\-S
文献类型:会议论文
专题:中国科学院半导体研究所(2009年前)
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AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD
会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:
Tang, J
;
Wang, XL
;
Xiao, HL
;
Ran, JX
;
Wang, CM
;
Wang, XY
;
Hu, GX
;
Li, JM
;
Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(222Kb)
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  |  
浏览/下载:2145/451
  |  
提交时间:2010/03/09
Performance
Heterostructures
Optimization
Mobility
High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Yan, FW
;
Gao, HY
;
Zhang, Y
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
;
Yan, FW, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
Adobe PDF(1746Kb)
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浏览/下载:3110/891
  |  
提交时间:2010/03/09
Gan
Mocvd
Led
Nano-pattern
Sem
Hrxrd
Pl
The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Wei, TB
;
Duan, RF
;
Wang, JX
;
Li, JM
;
Huo, ZQ
;
Zeng, YP
;
Wei, TB, Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China.
Adobe PDF(954Kb)
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浏览/下载:1904/511
  |  
提交时间:2010/03/09
Hvpe
Gan
Nitridation
Polarity
Etching
Improvement of GaN-based light emitting diodes performance grown on sapphire substrates patterned by wet etching - art. no. 684107
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Gao, HY
;
Yan, FW
;
Zhang, Y
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
;
Gao, HY, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, A35 Qinghua E Rd, Beijing 100083, Peoples R China.
Adobe PDF(753Kb)
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收藏
  |  
浏览/下载:3053/842
  |  
提交时间:2010/03/09
Pyramidal Patterned Substrate
Ingan/gan
Light-emitting Diode
Wet Etching
The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Yang, H
;
Chen, Y
;
Wang, LB
;
Yi, XY
;
Fan, JM
;
Liu, ZQ
;
Yang, FH
;
Wang, LC
;
Wang, GH
;
Zeng, YP
;
Li, JM
;
Yang, H, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
Adobe PDF(297Kb)
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收藏
  |  
浏览/下载:7736/2096
  |  
提交时间:2010/03/09
Gan-based Led
Grinding
Ray Tracing
Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Yan, JC
;
Wang, JX
;
Liu, NX
;
Liu, Z
;
Li, JM
;
Yan, JC, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
Adobe PDF(471Kb)
  |  
收藏
  |  
浏览/下载:2156/557
  |  
提交时间:2010/03/09
Algan
Gan Template
A1n Interlayer
Mocvd
Crack
Interference Fringes
High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Zhang, Y
;
Yan, FW
;
Gao, HY
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
;
Zhang, Y, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
Adobe PDF(929Kb)
  |  
收藏
  |  
浏览/下载:3805/1292
  |  
提交时间:2010/03/09
Gan
Nitrides
Led
Mocvd
Patterned Sapphire Substrate
Wet Etching
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Vancouver, CANADA, AUG 13-17, 2006
作者:
Wang, XY (Wang, Xiaoyan)
;
Wang, XL (Wang, Xiaoliang)
;
Wang, BZ (Wang, Baozhu)
;
Xiao, HL (Xiao, Hongling)
;
Liu, HX (Liu, Hongxin)
;
Wang, JX (Wang, Junxi)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
;
Wang, XY, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(229Kb)
  |  
收藏
  |  
浏览/下载:1727/341
  |  
提交时间:2010/03/29
Buffer Layer
Stress
Photodiodes
Reduction
Detectors
Sapphire
Epitaxy
Growth
Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AIN/GaN heterostructures grown on sapphire substrates by MOCVD
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:
Wang, XL
;
Wang, CM
;
Hu, GX
;
Wang, JX
;
Li, JP
;
Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(266Kb)
  |  
收藏
  |  
浏览/下载:1988/347
  |  
提交时间:2010/03/29
Molecular-beam Epitaxy
2-dimensional Electron-gas
Bulk Gan
Optimization
Layers
Hemts
Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:
Wang, CM
;
Wang, XL
;
Hu, GX
;
Wang, JX
;
Li, JP
;
Wang, CM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(335Kb)
  |  
收藏
  |  
浏览/下载:1325/297
  |  
提交时间:2010/03/29
High Breakdown Voltage
Mobility Transistors
Heterostructures
Sapphire
Ganhemts