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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Wei, TB
;
Duan, RF
;
Wang, JX
;
Li, JM
;
Huo, ZQ
;
Zeng, YP
;
Wei, TB, Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China.
Adobe PDF(954Kb)
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浏览/下载:1904/511
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提交时间:2010/03/09
Hvpe
Gan
Nitridation
Polarity
Etching
High-power operation of quantum cascade lasers endured prolonged air-oxidation
会议论文
Conference Digest of the 2006 Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, Shanghai, PEOPLES R CHINA, SEP 18-22, 2006
作者:
Shao, Y (Shao, Ye)
;
Liu, FQ (Liu, Feng-Qi)
;
Li, L (Li, Lu)
;
Lu, XZ (Lu, Xiu-Zhen)
;
Liu, JQ (Liu, Jun-Qi)
;
Wang, ZG (Wang, Zhan-Guo)
;
Liu, FQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(1197Kb)
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浏览/下载:1631/329
  |  
提交时间:2010/03/29
Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well
会议论文
APOC 2003:ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 5280, Wuhan, PEOPLES R CHINA, NOV 04-06, 2003
作者:
Ying-Qiang X
;
Zhang W
;
Niu ZC
;
Wu RG
;
Wang QM
;
Ying-Qiang X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(75Kb)
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浏览/下载:1730/495
  |  
提交时间:2010/10/29
Ganas
Sio2 Encapsulation
Rapid-thermal-annealing
Nitrogen Reorganization
Molecular-beam Epitaxy
Optical-properties
Mu-m
Micro-fabricated Al0.3Ga0.7As pyramids for potential SPM applications
会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:
Sun, J
;
Hu, LZ
;
Sun, YC
;
Wang, ZY
;
Sun, J, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China.
Adobe PDF(468Kb)
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浏览/下载:1377/242
  |  
提交时间:2010/03/29
Growth
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient
会议论文
MICROELECTRONIC ENGINEERING, 66 (1-4), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:
Wang QY
;
Wang JH
;
Deng HF
;
Lin LY
;
Wang QY Chinese Acad Sci Inst Semicond Mat Sci Ctr Beijing 100083 Peoples R China.
Adobe PDF(132Kb)
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浏览/下载:1841/328
  |  
提交时间:2010/11/15
Neutron Irradiation
Annealing
Defects In Silicon
Spectra
Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers
会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91, RIMINI, ITALY, SEP 24-28, 2001
作者:
Zhao YW
;
Sun NF
;
Dong HW
;
Jiao JH
;
Zhao JQ
;
Sun TN
;
Lin LY
;
Sun NF Hebei Semicond Res Inst POB 179-40 Shijiazhuang 050002 Hebei Peoples R China.
Adobe PDF(179Kb)
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浏览/下载:1710/289
  |  
提交时间:2010/11/15
Indium Phosphide
Semi-insulating
Annealing
Picts
Photoluminescence
Semiinsulating Inp
Indium-phosphide
Fe
Photoluminescence
Temperature
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Gao F
;
Lin YX
;
Huang DD
;
Li JP
;
Sun DZ
;
Kong MY
;
Zeng YP
;
Li JM
;
Lin LY
;
Gao F Chinese Acad Sci Ctr Mat Sci Inst Semicond Beijing 10083 Peoples R China.
Adobe PDF(96Kb)
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  |  
浏览/下载:1842/419
  |  
提交时间:2010/11/15
Annealing
Molecular Beam Epitaxy
Germanium Silicon Alloys
Semiconducting Materials
Strain Relaxation
The fabrication of thick SiO2 layer by anodization
会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:
Ou HY
;
Yang QQ
;
Lei HB
;
Wang QM
;
Hu XW
;
Ou HY Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(185Kb)
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  |  
浏览/下载:1422/369
  |  
提交时间:2010/11/15
Thick Sio2 Layer
Porous Silicon
Sio2/si Waveguide Device
Wave-guides
Silicon
First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)
会议论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 426 (1), FLORENCE, ITALY, MAR 04-06, 1998
作者:
Li Z
;
Dezilllie B
;
Eremin V
;
Li CJ
;
Verbitskaya E
;
Li Z Brookhaven Natl Lab Bldg 535BPOB 5000 Upton NY 11973 USA.
Adobe PDF(429Kb)
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浏览/下载:1656/327
  |  
提交时间:2010/11/15
Strip Detectors
Silicon Detectors
Annealing
Simulation
Irradiation
N-eff
Junction Detectors
Radiation-damage
Models
Dependence of ultra-thin gate oxide reliability on surface cleaning approach
会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:
Gao WY
;
Liu ZL
;
He ZJ
;
Gao WY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(259Kb)
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收藏
  |  
浏览/下载:1405/429
  |  
提交时间:2010/10/29
Chemical Treatment
Quality
Technology
Films