Dependence of ultra-thin gate oxide reliability on surface cleaning approach

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	Dependence of ultra-thin gate oxide reliability on surface cleaning approach
	Gao WY; Liu ZL; He ZJ; Gao WY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
	1998
会议名称	5th International Conference on Solid-State and Integrated Circuit Technology
会议录名称	1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS
页码	291-294
会议日期	OCT 21-23, 1998
会议地点	BEIJING, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-4306-9
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	In this paper, we investigate the effect of silicon surface cleaning prior to oxidation on the reliability of ultra-thin oxides. It is demonstrated that chemical preoxide grown in H2SO4/H2O2 (SPM) solution prior to oxidation provides better oxide integrity than both HF-based solution dipping and preoxide grown in RCA SC1 or SC2 solutions. It is also found that the oxides with SPM preoxide exhibit better hot-carrier immunity than the RCA cleaned oxides.
关键词	Chemical Treatment Quality Technology Films
学科领域	半导体材料
主办者	Chinese Inst Electr.; IEEE Electron Devices Soc.; IEEE Solid State Circuits Soc.; Japan Soc Appl Phys.; URSI Commiss D.; IEE, Electr Div, UK.; Korea Inst Telemat & Electr.; IEEE Beijing Sect.; Mat Res Soc.; Natl Nat Sci Fdn China.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13821
专题	中国科学院半导体研究所（2009年前）
通讯作者	Gao WY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Gao WY,Liu ZL,He ZJ,et al. Dependence of ultra-thin gate oxide reliability on surface cleaning approach[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,1998:291-294.

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