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The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Wei, TB;  Duan, RF;  Wang, JX;  Li, JM;  Huo, ZQ;  Zeng, YP;  Wei, TB, Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China.
Adobe PDF(954Kb)  |  收藏  |  浏览/下载：1828/511  |  提交时间：2010/03/09
Hvpe  Gan  Nitridation  Polarity  Etching  
Correlation between Er3+ emission and the microstructure of a-SiOx : H < Er > films 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Chen CY;  Chen WD;  Song SF;  Hsu CC;  Chen CY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(726Kb)  |  收藏  |  浏览/下载：1126/182  |  提交时间：2010/11/15
Hydrogenated Amorphous-silicon  Photoluminescence  Luminescence  Intensity  System  
Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Wang JN;  Sun BQ;  Wang XR;  Wang YQ;  Ge WK;  Jiang DS;  Wang HL;  Wang JN Hong Kong Univ Sci & Technol Dept Phys Clear Water Bay Kowloon Hong Kong Peoples R China.
Adobe PDF(113Kb)  |  收藏  |  浏览/下载：1323/271  |  提交时间：2010/11/15
Superlattices  Gaas/alas  Electric Field Domains  Tunnelling  Oscillations  
Self-sustained oscillations caused by magnetic field in a weakly-coupled GaAs/AlAs superlattice 会议论文
PHYSICA B, 279 (1-3), HONG KONG, HONG KONG, JUN 21-25, 1999
作者:  Sun BQ;  Wang JN;  Jiang DS;  Wu JQ;  Wang YQ;  Ge WK;  Sun BQ Chinese Acad Sci Inst Semicond NLSM POB 912 Beijing 100083 Peoples R China.
Adobe PDF(138Kb)  |  收藏  |  浏览/下载：1248/228  |  提交时间：2010/11/15
Transverse Magnetic Field  Field Domains  Self-sustained Oscillations  Semiconductors  
Growth and characterization of GaN on LiGaO2 and LiAlO2 会议论文
BLUE LASER AND LIGHT EMITTING DIODES II, CHIBA, JAPAN, SEP 29-OCT 02, 1998
作者:  Duan SK;  Teng XG;  Han PD;  Lu DC;  Duan SK Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab Beijing 100083 Peoples R China.
收藏  |  浏览/下载：916/0  |  提交时间：2010/10/29
Diodes  
Growth and characterization of GaN on LiGaO2 会议论文
JOURNAL OF CRYSTAL GROWTH, 195 (1-4), LA JOLLA, CALIFORNIA, MAY 31-JUN 04, 1998
作者:  Duan SK;  Teng XG;  Han PD;  Lu DC;  Duan SK Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab Beijing 100083 Peoples R China. 电子邮箱地址: skduan@red.semi.ac.cn
Adobe PDF(161Kb)  |  收藏  |  浏览/下载：1151/205  |  提交时间：2010/11/15
Diodes  
Formation mechanism of electric field domains 会议论文
MICROELECTRONIC ENGINEERING, 43-4, LISBON, PORTUGAL, MAY 19-21, 1997
作者:  Sun BQ;  Liu ZX;  Jiang DS;  Jiang DS Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 10083 Peoples R China.
Adobe PDF(287Kb)  |  收藏  |  浏览/下载：1048/210  |  提交时间：2010/11/15
Electric Field Domains  Gamma-gamma Resonant Tunnelling  Gamma-x Resonant Tunnelling  
Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate 会议论文
COMPOUND SEMICONDUCTORS 1997, 156, SAN DIEGO, CALIFORNIA, SEP 08-11, 1997
作者:  Jiang DS;  Ramsteiner M;  Brandt O;  Ploog KH;  Tews H;  Graber A;  Averbeck R;  Riechert H;  Jiang DS Paul Drude Inst Solid State Elect D-10117 Berlin Germany.
Adobe PDF(268Kb)  |  收藏  |  浏览/下载：1420/249  |  提交时间：2010/11/15
Shallow Donors