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1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots 会议论文
THIN SOLID FILMS, Awaji Isl, JAPAN, MAY 23-26, 2005
作者:  Yu, J;  Kasper, E;  Oehme, M;  Kasper, E, Univ Stuttgart, Inst Halbleitertech, Pfaffenwaldring 47, D-70569 Stuttgart, Germany. 电子邮箱地址: kasper@iht.uni-stuttgart.de
Adobe PDF(160Kb)  |  收藏  |  浏览/下载：1271/238  |  提交时间：2010/03/29
Sige  
Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Cui CX;  Chen YH;  Zhang CL;  Jin P;  Xu B;  Shi GX;  Zhao C;  Wang ZG;  Cui, CX, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(598Kb)  |  收藏  |  浏览/下载：1392/313  |  提交时间：2010/03/29
Quantum Dots