1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots
	Yu, J; Kasper, E; Oehme, M; Kasper, E, Univ Stuttgart, Inst Halbleitertech, Pfaffenwaldring 47, D-70569 Stuttgart, Germany. 电子邮箱地址: kasper@iht.uni-stuttgart.de
	2006
会议名称	4th International Conference on Silicon Epitaxy and Heterostructures
会议录名称	THIN SOLID FILMS
页码	508 (1-2): 396-398
会议日期	MAY 23-26, 2005
会议地点	Awaji Isl, JAPAN
出版地	PO BOX 564, 1001 LAUSANNE, SWITZERLAND
出版者	ELSEVIER SCIENCE SA
ISSN	0040-6090
部门归属	univ stuttgart, inst halbleitertech, d-70569 stuttgart, germany; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	Self-assembly Ge quantum dots (QD) on Si and Si/Ge mutli-quantum-wells (MQW) are grown by MBE. The island size and island density was investigated by atomics force microscopy. Ten-layer and twenty-layer MQW were selected for photodiode device fabrication. In photoluminescence (PL), a broad peak around 1.55-mu m wavelength was observed with higher peak intensity for the 10-layer MQW which had less defects than the 20-layer sample. Resonant cavity enhanced (RCE) photodiodes were fabricated by bonding on a SOI wafer. Selected responsivity at 1.55 mu m was successfully demonstrated. (c) 2005 Elsevier B.V. All rights reserved.
关键词	Sige
学科领域	半导体材料
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10022
专题	中国科学院半导体研究所（2009年前）
通讯作者	Kasper, E, Univ Stuttgart, Inst Halbleitertech, Pfaffenwaldring 47, D-70569 Stuttgart, Germany. 电子邮箱地址: kasper@iht.uni-stuttgart.de
推荐引用方式 GB/T 7714	Yu, J,Kasper, E,Oehme, M,et al. 1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots[C]. PO BOX 564, 1001 LAUSANNE, SWITZERLAND:ELSEVIER SCIENCE SA,2006:508 (1-2): 396-398.

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