Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice

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	Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice
	Cui CX; Chen YH; Zhang CL; Jin P; Xu B; Shi GX; Zhao C; Wang ZG; Cui, CX, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
	2004
Conference Name	13th International Conference on Semiconducting and Insulating Materials (SIMC XIII)
Source Publication	SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials
Pages	131-134
Conference Date	SEP 20-25, 2004
Conference Place	Beijing, PEOPLES R CHINA
Publication Place	345 E 47TH ST, NEW YORK, NY 10017 USA
Publisher	IEEE
ISBN	0-7803-8668-X
metadata_83	chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
Abstract	A promising approach for positioning of InAs islands on (110)GaAs is demonstrated. By combining self-assembly of quantum dots with solid source molecular beam epitaxy (MBE) on cleaved edge of InGaAs/GaAs superlattice (SL), linear alignment of InAs islands on the InGaAs strain layers have been fabricated The cleaved edge of InGaAs/GaAs SL acts as strain nanopattern for InAs selective growth. Indium atoms incident on the surface will preferentially migrate to InGaAs regions where favorable bonding sites are available. The strain nanopattern's effect is studied by the different indium fraction and thickness of InxGa1-xAs/GaAs SL. The ordering of the InAs islands is found to depend on the properties of the underlying InGaAs strain layers.
Keyword	Quantum Dots
Subject Area	半导体材料
Funding Organization	IEEE Electron Devices Soc.; Chinese Acad Sci.; Natl Nat Sci Fdn China.; Hakuto Co Ltd.; Shenzhen Oceans King Investment Imp & Exp Co.; Shenzhen Refond Opt ELE Co Ltd.; Jiangsu Nata Optoelect Mat Co Ltd.; Beijing Univ Technol.; Gen Res Inst Nnferrous Mat.; Nanjing Univ.; Shanghai Inst Microsyst & Informat Technol.; Sun Yat Univ.; Shanghai Inst Microsyst & Informat Technol.; Sun Yat Univ.; Zhejiang Univ.
Indexed By	其他
Language	英语
Document Type	会议论文
Identifier	http://ir.semi.ac.cn/handle/172111/9918
Collection	中国科学院半导体研究所（2009年前）
Corresponding Author	Cui, CX, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Recommended Citation GB/T 7714	Cui CX,Chen YH,Zhang CL,et al. Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2004:131-134.

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