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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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A VSLMS Style Tap-length Learning Algorithm for Structure Adaptation
会议论文
2008 11TH IEEE SINGAPORE INTERNATIONAL CONFERENCE ON COMMUNICATION SYSTEMS (ICCS), Guangzhou, PEOPLES R CHINA, NOV 19-21, 2008
作者:
Yu, HM
;
Liu, ZL
;
Li, GS
;
Yu, HM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(137Kb)
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浏览/下载:1476/241
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提交时间:2010/03/09
Adaptive Filter
Equalizer
Structure Adaptive
Fractional Tap-length
Recent research results on deep level defects in semi-insulating InP - Application to improve material quality
会议论文
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, NJ, MAY 07-11, 2006
作者:
Zhao, YW (Zhao, Youwen)
;
Dong, ZY (Dong, Zhiyuan)
;
Dong, HW (Dong, Hongwei)
;
Sun, NF (Sun, Niefeng)
;
Sun, TN (Sun, Tongnian)
;
Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(376Kb)
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浏览/下载:1594/450
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提交时间:2010/03/29
Stimulated Current Spectroscopy
Current Transient Spectroscopy
Fe-doped Inp
Point-defects
Compensation
Temperature
Donors
Traps
Improvement of the electrical property of semi-insulating InP by suppression of compensation defects
会议论文
2005 International Conference on Indium Phosphide and Related Materials丛书标题: CONFERENCE PROCEEDINGS - INDIUM PHOSPHIDE AND RELATED MATERIALS, Glasgow, SCOTLAND, MAY 08-12, 2005
作者:
Zhao, YW
;
Dong, ZY
;
Zhao, YW, Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, POB 912, Beijing 10083, Peoples R China.
Adobe PDF(638Kb)
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浏览/下载:1715/383
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提交时间:2010/03/29
Encapsulated Czochralski Inp
Semiconductor Compound-crystals
Stimulated Current Spectroscopy
Current Transient Spectroscopy
Deep-level Defects
Annealing Ambient
Point-defects
Fe
Phosphide
Donors
Annealing ambient controlled deep defect formation in InP
会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
作者:
Zhao YW
;
Dong ZY
;
Duan ML
;
Sun WR
;
Zeng YP
;
Sun NF
;
Sun TN
;
Zhao YW Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.nc
Adobe PDF(186Kb)
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浏览/下载:1572/301
  |  
提交时间:2010/10/29
Fe-doped Inp
Semiinsulating Inp
Point-defects
Pressure
Wafers
Traps
Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration
会议论文
SMIC-XIII2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:
Zhao, YW
;
Dong, ZY
;
Zhang, YH
;
Li, CJ
;
Zhao, YW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(230Kb)
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浏览/下载:1511/312
  |  
提交时间:2010/03/29
Deep-level Defects
Fe-doped Inp
Grown Inp
Spectroscopy
Resonance
Wafer
Hydrogen behavior in GaN epilayers grown by NH3-MBE
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Kong MY
;
Zhang JP
;
Wang XL
;
Sun DZ
;
Kong MY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(187Kb)
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浏览/下载:1389/345
  |  
提交时间:2010/11/15
Impurities
Molecular Beam Epitaxy
Nitrides
Semiconducting Iii-v Materials
Gallium Nitride
Sapphire Substrate
Defects
Heterostructure
Semiconductors
Stress
High power continuous-wave operation of self-organized In(Ga)As/GaAs quantum dot lasers
会议论文
1999 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, SHATIN, HONG KONG, 36337
作者:
Wang ZG
;
Liang JB
;
Qian G
;
Xu B
;
Wang ZG Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(114Kb)
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  |  
浏览/下载:1205/176
  |  
提交时间:2010/10/29
High quality hydrogenated amorphous silicon films with significantly improved stability
会议论文
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 507, SAN FRANCISCO, CA, APR 14-17, 1998
作者:
Sheng SR
;
Liao XB
;
Ma ZX
;
Yue GZ
;
Wang YQ
;
Kong GL
;
Sheng SR Chinese Acad Sci State Lab Surface Phys Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(390Kb)
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  |  
浏览/下载:1414/281
  |  
提交时间:2010/10/29
A-si-h
Light Soaking
Photoconductivity
Increase
The SPER and characteristics of Si1-yCy alloys
会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:
Yu Z
;
Yu JZ
;
Cheng BW
;
Lei ZL
;
Li DZ
;
Wang QM
;
Liang JW
;
Yu Z Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(211Kb)
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  |  
浏览/下载:1370/206
  |  
提交时间:2010/10/29
Si1-ycy Alloys
Ion implantatIon
Solid Phase Epitaxy Recrystallization
Hydrogen related defects in InP
会议论文
PROCEEDINGS OF THE SYMPOSIUM ON LIGHT EMITTING DEVICES FOR OPTOELECTRONIC APPLICATIONS AND THE TWENTY-EIGHTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS, 98 (2), SAN DIEGO, CA, MAY 03-08, 1998
作者:
Han YJ
;
Liu XL
;
Jiao JH
;
Lin LY
;
Han YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(259Kb)
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  |  
浏览/下载:1372/172
  |  
提交时间:2010/10/29