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Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 23, 页码: 231108
Authors:  Liu Z (Liu, Zhi);  Hu WX (Hu, Weixuan);  Li C (Li, Chong);  Li YM (Li, Yaming);  Xue CL (Xue, Chunlai);  Li CB (Li, Chuanbo);  Zuo YH (Zuo, Yuhua);  Cheng BW (Cheng, Buwen);  Wang QM (Wang, Qiming)
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Light-emitting-diodes  Ge  Si  Silicon  Gain  Gap  
Electrical characteristics of a vertical light emitting diode with N-type contacts on a selectively wet-etching roughened surface 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 2, 页码: 24009
Authors:  Wang, Liancheng;  Guo, Enqing;  Liu, Zhiqiang;  Yi, Xiaoyan;  Wang, Guohong;  Wang, L.(wanglc@semi.ac.cn)
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Gallium Nitride  Leakage Currents  Light Emission  Light Emitting Diodes  Metallizing  Polarization  Testing  Water Analysis  
Comprehensive thermal characterization using ruby R fluorescence lines of sapphire and GaNE(2)-high Raman mode from Raman spectra in high-power flip-chip InGaN/GaN LEDs 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 35, 页码: 355101
Authors:  Cui M;  Zhou TF;  Wang MR;  Huang J;  Huang HJ;  Zhang JP;  Xu K;  Yang H;  Cui, M (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China, tfzhou2007@sinano.ac.cn;  kxu2006@sinano.ac.cn
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Light-emitting-diodes  Temperature-measurements  Gan  Scattering  Dependence  Junction  Phonons  Aln  
Localized surface optical phonon mode in the InGaN/GaN multiple-quantum-wells nanopillars: Raman spectrum and imaging 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 11, 页码: 113115
Authors:  Zhu JH;  Ning JQ;  Zheng CC;  Xu SJ;  Zhang SM;  Yang H;  Zhu, JH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China, sjxu@hkucc.hku.hk;  hyang2006@sinano.ac.cn
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Light-emitting-diodes  Laser-diodes  Gan  Nanowires  
A practical route towards fabricating GaN nanowire arrays 期刊论文
CRYSTENGCOMM, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935
Authors:  Liu, JQ;  Huang, J;  Gong, XJ;  Wang, JF;  Xu, K;  Qiu, YX;  Cai, DM;  Zhou, TF;  Ren, GQ;  Yang, H;  Xu, K (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China,kxu2006@sinano.ac.cn
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Light-emitting-diodes  Epitaxial Lateral Overgrowth  Chemical-vapor-deposition  Well Nanorod Arrays  Ultraviolet-light  Growth  Nanogenerators  Dislocations  Brightness  Layers  
Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 1, 页码: Article no.18503
Authors:  Wang W;  Huang BJ;  Dong Z;  Chen HD;  Wang, W, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. wangweiww33@semi.ac.cn
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Optoelectronic Integrated Circuit  Complementary Metal-oxide-semiconductor Technology  Silicon-based Light Emitting Device  Electroluminescence  Avalanche Breakdown  Photon-emission  Current-density  Diodes  Model  Electroluminescence  Superlattices  Efficiency  Junctions  Leds  
Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 6, 页码: Article no.68502
Authors:  Wu M;  Zeng YP;  Wang JX;  Hu Q;  Wu, M, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. wumeng@semi.ac.cn
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Light-emitting-diodes  Ultraviolet  Growth  
Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 34, 页码: 345101
Authors:  Deng QW;  Wang XL;  Xiao HL;  Wang CM;  Yin HB;  Chen H;  Lin DF;  Jiang LJ;  Feng C;  Li JM;  Wang ZG;  Hou X;  Deng, QW (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China, daven@semi.ac.cn
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Light-emitting-diodes  Vapor-phase Epitaxy  Band-gap  Mg  Photoluminescence  Ingan  Dependence  Strain  Energy  Inn  
Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 6, 页码: Art. No. 064202
Authors:  Wu J;  Lu XQ;  Jin P;  Meng XQ;  Wang ZG
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Light-emitting-diodes  Optical-properties  Tuning Range  Nm  Emission  Spectrum  Spectroscopy  
High-power quantum dot superluminescent diode with integrated optical amplifier section 期刊论文
ELECTRONICS LETTERS, 2011, 卷号: 47, 期号: 21, 页码: 1191-
Authors:  Wang, ZC;  Jin, P;  Lv, XQ;  Li, XK;  Wang, ZG;  Wang, ZC (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China,pengjin@red.semi.ac.cn
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Light-emitting-diodes  Spectrum