中国科学院半导体研究所机构知识库(SEMI OpenIR): NO TITLE

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文章名称	第一作者	下载量
Symmetry and Lattice Dynamics	Hui Tang	3657
A High-Speed CMOS Image Sensor with Column-Parallel Single Capacitor CDSs and Sing..	Li QL (Li Quanliang)	3325
半导体科学与技术	何杰	3259
半导体的检测与分析	许振嘉	3205
Investigation of oxygen vacancy and interstitial oxygen defects in ZnO films by ph..	Fan HB (Fan Hai-Bo)	2875
High-speed analog DFB laser module operated in direct modulation for Ku-band	Liu Y (Liu Yu)	2742
Mechanical and electronic properties of monolayer MoS2 under elastic strain	Yue, Q	2677
The effects of sapphire substrates processes to the LED efficiency - art. no. 6841..	Yang, H	2096
Analysis of the optical confinement factor in semiconductor lasers	Huang YZ	1765
Electronic, structural, and optical properties of crystalline yttria	Xu YN	1578
Plasma induced damage in GaN-based light emitting diodes - art. no. 68410X	Li, Y	1521
Computer-aided design of PV/wind hybrid system	Ai B	1505
Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forwar..	Lv YJ	1501
Investigation on the strain relaxation of InGaN layer and its effects on the InGaN..	Wang H (Wang H.)	1469
Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-..	Zhao DG	1448
新型高效太阳能电池研究进展	赵杰	1431
增强型AlGaN/GaN HEMT器件工艺的研究进展	杜彦东	1392
Image Lag Optimization of Four-Transistor Pixel for High Speed CMOS Image	Zhou YF (Zhou Yangfan)	1352
Raman scattering of non-planar graphite: arched edges, polyhedral crystals, whiske..	Tan PH	1339
Synthesis and structures of morphology-controlled ZnO nano- and microcrystals	Peng WQ	1337
半导体材料的华丽家族-氮化镓基材料简介	孙殿照	1315
High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - ..	Zhang, Y	1292
Surface morphology of AlN buffer layer and its effect on GaN growth by metalorgani..	Zhao, DG	1218
碳材料的拉曼光谱	谭平恒	1189
1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GH..	Wang XL	1186
128×160元GaAs／AlGaAs多量子阱长波红外焦平面阵列	苏艳梅	1157
First-principles study on rutile TiO2 quantum dots	Peng, HW	1153
Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1-xAlxN	Fan WJ	1122
Advances in high power semiconductor diode lasers - art. no. 682402	Ma, XY	1103
Single-mode condition for silicon rib waveguides with trapezoidal cross-section	Xia, JS	1088
下一代测序技术:技术回顾与展望	周晓光	1072
Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well	Fan WJ	1041
Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide ..	Ma ZX	1023
Improving light extraction of InGaN-based light emitting diodes with a roughened p..	Wei TB	1019
纳米半导体技术	王占国	1018
Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on ..	Gao, HY	1000
荧光寿命成像技术及其研究进展	刘超	984
Electropolymerized poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT..	Yan J (Yan Jun)	972
Optical analysis of dislocation-related physical processes in GaN-based epilayers	Jiang	938
A Fully Integrated 900-MHz Passive RFID Transponder Front End With Novel Zero-Thre..	Yao Y	935
Functionalization of monolayer MoS2 by substitutional doping: A first-principles s..	Yue, Qu	931
Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition	Qu BZ	930
单芯片集成 WLAN 射频收发机中前端电路研究	彭苗	924
一种用于微电子机械系统的碳化硅微通道的制作方法	刘兴昉	923
Microstructure and Optical Properties of Nonpolar m-Plane GaN Films Grown on m-Pla..	Wei, TB	910
Phosphor-conversion white light using InGaN ultraviolet laser diode	Xu Y	908
High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates fo..	Yan, FW	891
Growth of crack-free AlGaN film on thin AlN interlayer by MOCVD	Jin RQ	889
An ultra-low power CMOS random number generator	Zhou, SH	874
SiC材料及器件研制的进展	李晋闽	872
High speed silicon Mach-Zehnder modulator based on interleaved PN junctions	Xu, H	870
Influence of high-temperature AIN buffer thickness on the properties of GaN grown ..	Zhang BS	868
Synthesis and photoluminescence of ZnS : Cu nanoparticles	Peng WQ (Peng W. Q.)	866
Four-channel reconfigurable optical add-drop multiplexer based on photonic wire wa..	Geng MM	863
单纵模多环形腔掺铒光纤激光器及其稳定性	张欣	858
Strain effect on the band structure of InAs/GaAs quantum dots	Zhu HJ	857
超辐射发光二极管的应用	王佐才	852
高击穿电压AlGaN/GaN HEMT电力开关器件研究进展	张明兰	845
Optimization of grid design for solar cells	Liu Wen	845
DETERMINATION OF THE CONDUCTION-BAND OFFSET OF A SINGLE ALGAAS BARRIER LAYER USING..	ZHU QS	843
Improvement of GaN-based light emitting diodes performance grown on sapphire subst..	Gao, HY	842
Low temperature annealing effects on the structure and optical properties of ZnO f..	Zhu BL (Zhu B. L.)	842
Monolithic Integration of Widely Tunable Sampled Grating DBR Laser with Tilted Sem..	Ye N (Ye Nan)	839
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer	Pan X (Pan Xu)	831
High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity ..	Feng G	827
Picosecond timing synchronization control signal for 3D range-gated imaging	Yang JB (Yang Jinbao)	827
ZEMAX在多模光纤准直器设计中的应用	雷平顺	826
基于STM32 和FPGA 的激光甲烷检测系统设计	范松涛	826
Resonant Raman scattering of a-SiNx : H	Wang Y	823
拓扑绝缘体量子点中的少电子问题	李健	814
GaN基紫外探测器及其研究进展	李向阳	810
半导体激光器相对强度噪声的实验研究	朱晓鹏	810
Surface plasmon enhanced GaAs thin film solar cells	Liu W	807
微电子与光电子集成技术	陈弘达	803
Effect of Nitridation on Morphology, Structural Properties and Stress of AIN Films	Hu WG	798
Electrical properties of B-doped polycrystalline silicon thin films prepared by ra..	Ai B	794
Harmonic RF carrier generation and broadband data upconversion using stimulated Br..	Li W	794
半导体中自旋轨道耦合及自旋霍尔效应	常凯	793
25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved P..	Xiao X(肖希)	791
半导体量子点及其应用(Ⅰ)	赵凤瑷	788
光电子器件微波封装和测试	祝宁华	786
量子通信与量子计算	张庆秀	786
Calculation of the hourly and daily radiation incident on three step tracking plan..	Ai B	785
Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N..	Cong GW	780
Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thi..	Yang, JL	778
第一性原理研究Mg,Si和Mn共掺GaN	邢海英	773
Temperature dependence of the Fermi level in low-temperature-grown GaAs	Chen YH	769
黑磷中杂质散射研究	邹永连	767
Structural characterization of AlGaN/GaN superlattices by x-ray diffraction and Ru..	Zhou SQ (Zhou Shengqiang)	766
基于FPGA的数字锁相放大器在气体探测中的应用	范松涛	766
Research on color matching of LED backlight for large-color-gamut LCD application ..	Liang, M	765
Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire subst..	Wang XL	765
The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy	Huang X	765
Design of shallow acceptors in ZnO: First-principles band-structure calculations	Li J (Li Jingbo)	764
GeSn p-i-n photodetector for all telecommunication bands detection	Su SJ	762
Magnetic ordering and irreversible magnetization between ZFC and FC states in RCo5..	Chang H	761
Electronic structures of wurtzite ZnO, BeO, MgO and p-type doping in Zn1-xYxO (Y =..	Xu, Q	753
Structural and electronic properties of Si nanocrystals embedded in amorphous SiC ..	Song C	753
Role of interface dipole in metal gate/high-k effective work function modulation b..	Yang ZC	752
Five-port optical router for photonic networks-on-chip	Ji, RQ	751

文章名称	第一作者	下载量
Symmetry and Lattice Dynamics	Hui Tang	3631
A High-Speed CMOS Image Sensor with Column-Parallel Single Capacitor CDSs and Sing..	Li QL (Li Quanliang)	3313
半导体科学与技术	何杰	3054
Investigation of oxygen vacancy and interstitial oxygen defects in ZnO films by ph..	Fan HB (Fan Hai-Bo)	2867
半导体的检测与分析	许振嘉	2821
High-speed analog DFB laser module operated in direct modulation for Ku-band	Liu Y (Liu Yu)	2716
Mechanical and electronic properties of monolayer MoS2 under elastic strain	Yue, Q	2667
The effects of sapphire substrates processes to the LED efficiency - art. no. 6841..	Yang, H	2082
Analysis of the optical confinement factor in semiconductor lasers	Huang YZ	1758
Electronic, structural, and optical properties of crystalline yttria	Xu YN	1576
Plasma induced damage in GaN-based light emitting diodes - art. no. 68410X	Li, Y	1517
Computer-aided design of PV/wind hybrid system	Ai B	1504
Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forwar..	Lv YJ	1498
Investigation on the strain relaxation of InGaN layer and its effects on the InGaN..	Wang H (Wang H.)	1464
Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-..	Zhao DG	1441
新型高效太阳能电池研究进展	赵杰	1403
增强型AlGaN/GaN HEMT器件工艺的研究进展	杜彦东	1363
Image Lag Optimization of Four-Transistor Pixel for High Speed CMOS Image	Zhou YF (Zhou Yangfan)	1347
Raman scattering of non-planar graphite: arched edges, polyhedral crystals, whiske..	Tan PH	1335
Synthesis and structures of morphology-controlled ZnO nano- and microcrystals	Peng WQ	1335
半导体材料的华丽家族-氮化镓基材料简介	孙殿照	1300
High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - ..	Zhang, Y	1288
Surface morphology of AlN buffer layer and its effect on GaN growth by metalorgani..	Zhao, DG	1213
1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GH..	Wang XL	1186
First-principles study on rutile TiO2 quantum dots	Peng, HW	1153
128×160元GaAs／AlGaAs多量子阱长波红外焦平面阵列	苏艳梅	1150
碳材料的拉曼光谱	谭平恒	1149
Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1-xAlxN	Fan WJ	1122
Advances in high power semiconductor diode lasers - art. no. 682402	Ma, XY	1098
Single-mode condition for silicon rib waveguides with trapezoidal cross-section	Xia, JS	1086
下一代测序技术:技术回顾与展望	周晓光	1068
Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well	Fan WJ	1039
Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide ..	Ma ZX	1023
Improving light extraction of InGaN-based light emitting diodes with a roughened p..	Wei TB	1006
Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on ..	Gao, HY	994
荧光寿命成像技术及其研究进展	刘超	973
Electropolymerized poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT..	Yan J (Yan Jun)	972
Optical analysis of dislocation-related physical processes in GaN-based epilayers	Jiang	934
A Fully Integrated 900-MHz Passive RFID Transponder Front End With Novel Zero-Thre..	Yao Y	932
纳米半导体技术	王占国	931
Functionalization of monolayer MoS2 by substitutional doping: A first-principles s..	Yue, Qu	926
Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition	Qu BZ	923
一种用于微电子机械系统的碳化硅微通道的制作方法	刘兴昉	922
Microstructure and Optical Properties of Nonpolar m-Plane GaN Films Grown on m-Pla..	Wei, TB	901
Phosphor-conversion white light using InGaN ultraviolet laser diode	Xu Y	901
单芯片集成 WLAN 射频收发机中前端电路研究	彭苗	892
Growth of crack-free AlGaN film on thin AlN interlayer by MOCVD	Jin RQ	888
High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates fo..	Yan, FW	882
An ultra-low power CMOS random number generator	Zhou, SH	874
Synthesis and photoluminescence of ZnS : Cu nanoparticles	Peng WQ (Peng W. Q.)	866
Influence of high-temperature AIN buffer thickness on the properties of GaN grown ..	Zhang BS	865
High speed silicon Mach-Zehnder modulator based on interleaved PN junctions	Xu, H	865
SiC材料及器件研制的进展	李晋闽	864
Four-channel reconfigurable optical add-drop multiplexer based on photonic wire wa..	Geng MM	859
Strain effect on the band structure of InAs/GaAs quantum dots	Zhu HJ	857
单纵模多环形腔掺铒光纤激光器及其稳定性	张欣	856
DETERMINATION OF THE CONDUCTION-BAND OFFSET OF A SINGLE ALGAAS BARRIER LAYER USING..	ZHU QS	842
Optimization of grid design for solar cells	Liu Wen	842
Low temperature annealing effects on the structure and optical properties of ZnO f..	Zhu BL (Zhu B. L.)	841
超辐射发光二极管的应用	王佐才	835
Improvement of GaN-based light emitting diodes performance grown on sapphire subst..	Gao, HY	834
Monolithic Integration of Widely Tunable Sampled Grating DBR Laser with Tilted Sem..	Ye N (Ye Nan)	833
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer	Pan X (Pan Xu)	830
High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity ..	Feng G	827
高击穿电压AlGaN/GaN HEMT电力开关器件研究进展	张明兰	826
Resonant Raman scattering of a-SiNx : H	Wang Y	823
ZEMAX在多模光纤准直器设计中的应用	雷平顺	823
Picosecond timing synchronization control signal for 3D range-gated imaging	Yang JB (Yang Jinbao)	823
基于STM32 和FPGA 的激光甲烷检测系统设计	范松涛	821
Surface plasmon enhanced GaAs thin film solar cells	Liu W	803
半导体激光器相对强度噪声的实验研究	朱晓鹏	799
Effect of Nitridation on Morphology, Structural Properties and Stress of AIN Films	Hu WG	798
Electrical properties of B-doped polycrystalline silicon thin films prepared by ra..	Ai B	794
GaN基紫外探测器及其研究进展	李向阳	794
Calculation of the hourly and daily radiation incident on three step tracking plan..	Ai B	785
Harmonic RF carrier generation and broadband data upconversion using stimulated Br..	Li W	783
量子通信与量子计算	张庆秀	782
Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thi..	Yang, JL	777
半导体量子点及其应用(Ⅰ)	赵凤瑷	775
Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N..	Cong GW	773
半导体中自旋轨道耦合及自旋霍尔效应	常凯	772
拓扑绝缘体量子点中的少电子问题	李健	770
第一性原理研究Mg,Si和Mn共掺GaN	邢海英	769
Temperature dependence of the Fermi level in low-temperature-grown GaAs	Chen YH	768
Structural characterization of AlGaN/GaN superlattices by x-ray diffraction and Ru..	Zhou SQ (Zhou Shengqiang)	766
The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy	Huang X	764
Research on color matching of LED backlight for large-color-gamut LCD application ..	Liang, M	763
Design of shallow acceptors in ZnO: First-principles band-structure calculations	Li J (Li Jingbo)	763
Magnetic ordering and irreversible magnetization between ZFC and FC states in RCo5..	Chang H	761
Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire subst..	Wang XL	760
GeSn p-i-n photodetector for all telecommunication bands detection	Su SJ	755
基于FPGA的数字锁相放大器在气体探测中的应用	范松涛	754
Electronic structures of wurtzite ZnO, BeO, MgO and p-type doping in Zn1-xYxO (Y =..	Xu, Q	753
Structural and electronic properties of Si nanocrystals embedded in amorphous SiC ..	Song C	752
Role of interface dipole in metal gate/high-k effective work function modulation b..	Yang ZC	751
25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved P..	Xiao X(肖希)	751
AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief ..	Liu, NX	747
A study of indium incorporation in In-rich InGaN grown by MOVPE	Guo Y	745
黑磷中杂质散射研究	邹永连	745
Simulation of a monolithically integrated CMOS bioamplifier for EEG recordings	Sui XH (Sui Xiaohong)	744

文章名称	第一作者	下载量
Investigation of oxygen vacancy and interstitial oxygen defects in ZnO films by ph..	Fan HB (Fan Hai-Bo)	2281
Symmetry and Lattice Dynamics	Hui Tang	1677
The effects of sapphire substrates processes to the LED efficiency - art. no. 6841..	Yang, H	1676
Analysis of the optical confinement factor in semiconductor lasers	Huang YZ	1433
A High-Speed CMOS Image Sensor with Column-Parallel Single Capacitor CDSs and Sing..	Li QL (Li Quanliang)	1373
Plasma induced damage in GaN-based light emitting diodes - art. no. 68410X	Li, Y	1303
Electronic, structural, and optical properties of crystalline yttria	Xu YN	1266
Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forwar..	Lv YJ	1163
Investigation on the strain relaxation of InGaN layer and its effects on the InGaN..	Wang H (Wang H.)	1148
Computer-aided design of PV/wind hybrid system	Ai B	1145
Raman scattering of non-planar graphite: arched edges, polyhedral crystals, whiske..	Tan PH	1117
High-speed analog DFB laser module operated in direct modulation for Ku-band	Liu Y (Liu Yu)	1055
Mechanical and electronic properties of monolayer MoS2 under elastic strain	Yue, Q	1045
High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - ..	Zhang, Y	1043
Image Lag Optimization of Four-Transistor Pixel for High Speed CMOS Image	Zhou YF (Zhou Yangfan)	1013
Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-..	Zhao DG	972
Surface morphology of AlN buffer layer and its effect on GaN growth by metalorgani..	Zhao, DG	950
First-principles study on rutile TiO2 quantum dots	Peng, HW	937
Synthesis and structures of morphology-controlled ZnO nano- and microcrystals	Peng WQ	900
Single-mode condition for silicon rib waveguides with trapezoidal cross-section	Xia, JS	889
1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GH..	Wang XL	889
Advances in high power semiconductor diode lasers - art. no. 682402	Ma, XY	805
Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1-xAlxN	Fan WJ	804
Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide ..	Ma ZX	763
Improving light extraction of InGaN-based light emitting diodes with a roughened p..	Wei TB	763
Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well	Fan WJ	751
Electropolymerized poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT..	Yan J (Yan Jun)	717
增强型AlGaN/GaN HEMT器件工艺的研究进展	杜彦东	715
Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition	Qu BZ	705
Growth of crack-free AlGaN film on thin AlN interlayer by MOCVD	Jin RQ	698
A Fully Integrated 900-MHz Passive RFID Transponder Front End With Novel Zero-Thre..	Yao Y	697
High speed silicon Mach-Zehnder modulator based on interleaved PN junctions	Xu, H	677
High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates fo..	Yan, FW	672
Strain effect on the band structure of InAs/GaAs quantum dots	Zhu HJ	666
High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity ..	Feng G	653
DETERMINATION OF THE CONDUCTION-BAND OFFSET OF A SINGLE ALGAAS BARRIER LAYER USING..	ZHU QS	649
Optical analysis of dislocation-related physical processes in GaN-based epilayers	Jiang	647
Picosecond timing synchronization control signal for 3D range-gated imaging	Yang JB (Yang Jinbao)	647
Optimization of grid design for solar cells	Liu Wen	638
Four-channel reconfigurable optical add-drop multiplexer based on photonic wire wa..	Geng MM	635
Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thi..	Yang, JL	630
Low temperature annealing effects on the structure and optical properties of ZnO f..	Zhu BL (Zhu B. L.)	620
Microstructure and Optical Properties of Nonpolar m-Plane GaN Films Grown on m-Pla..	Wei, TB	619
Improvement of GaN-based light emitting diodes performance grown on sapphire subst..	Gao, HY	616
Resonant Raman scattering of a-SiNx : H	Wang Y	613
Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on ..	Gao, HY	612
Functionalization of monolayer MoS2 by substitutional doping: A first-principles s..	Yue, Qu	611
Five-port optical router for photonic networks-on-chip	Ji, RQ	608
Temperature dependence of the Fermi level in low-temperature-grown GaAs	Chen YH	604
Synthesis and photoluminescence of ZnS : Cu nanoparticles	Peng WQ (Peng W. Q.)	595
Electronic structures of wurtzite ZnO, BeO, MgO and p-type doping in Zn1-xYxO (Y =..	Xu, Q	594
An Accurate and Fast Behavioral Model for PLL Frequency Synthesizer Phase Noise/Sp..	Yan XZ (Yan Xiaozhou)	589
Phosphor-conversion white light using InGaN ultraviolet laser diode	Xu Y	587
Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2	Weijie Zhao	584
Calculation of the hourly and daily radiation incident on three step tracking plan..	Ai B	583
Research on color matching of LED backlight for large-color-gamut LCD application ..	Liang, M	581
Monolithic Integration of Widely Tunable Sampled Grating DBR Laser with Tilted Sem..	Ye N (Ye Nan)	580
Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD	Jiang L	576
An ultra-low power CMOS random number generator	Zhou, SH	572
Effect of Nitridation on Morphology, Structural Properties and Stress of AIN Films	Hu WG	572
Surface plasmon enhanced GaAs thin film solar cells	Liu W	568
The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy	Huang X	562
Structural characterization of AlGaN/GaN superlattices by x-ray diffraction and Ru..	Zhou SQ (Zhou Shengqiang)	555
Magnetic ordering and irreversible magnetization between ZFC and FC states in RCo5..	Chang H	552
GeSn p-i-n photodetector for all telecommunication bands detection	Su SJ	550
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer	Pan X (Pan Xu)	543
Structural, elastic, and electronic properties of cubic perovskite BaHfO3 obtained..	Zhao HS	542
Simulation of a monolithically integrated CMOS bioamplifier for EEG recordings	Sui XH (Sui Xiaohong)	539
Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N..	Cong GW	539
AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief ..	Liu, NX	537
Role of interface dipole in metal gate/high-k effective work function modulation b..	Yang ZC	535
High-mobility germanium-tin(GeSn) P-channel MOSFETs featuring metallic source/drai..	Han, Genquan	531
Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate	Wu M	529
AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grow..	Wang XL (Wang Xiaoliang)	523
Hydrogen sensors based on AlGaN/AIN/GaN HEMT	Wang, XH	517
Effect of the oxygen concentration on the properties of Gd2O3 thin films	Li YL	512
Influence of high-temperature AIN buffer thickness on the properties of GaN grown ..	Zhang BS	511
Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD	Ran JX	509
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Effect of defects on optical phonon Raman spectra in SiC nanorods	Zhang SL	493
Electrical properties of B-doped polycrystalline silicon thin films prepared by ra..	Ai B	492
25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved P..	Xiao X(肖希)	492
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Formation of high reflective Ni/Ag/Ti/Au contact on p-GaN	Jiang F (Jiang Fang)	479
40-Gb/s Low Chirp Electroabsorption Modulator Integrated With DFB Laser	Cheng YB	478
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Magnetic coupling properties of rare-earth metals (Gd, Nd) doped ZnO: First-princi..	Shi HL	472
Design of shallow acceptors in ZnO: First-principles band-structure calculations	Li J (Li Jingbo)	472
A direct-conversion mixer with a DC-offset cancellation for WLAN	Xu, Q	469

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