The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M
	Yang, H; Chen, Y; Wang, LB; Yi, XY; Fan, JM; Liu, ZQ; Yang, FH; Wang, LC; Wang, GH; Zeng, YP; Li, JM; Yang, H, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
	2008
会议名称	Conference on Solid State Lighting and Solar Energy Technologies
会议录名称	SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES
页码	6841: M8410-M8410
会议日期	NOV 12-14, 2007
会议地点	Beijing, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	978-0-8194-7016-4
部门归属	[yang, hua; chen, yu; wang, libin; yi, xiaoyan; fan, jingmei; liu, zhiqiang; yang, fuhua; wang, liangchen; wang, guohong; zeng, yiping; li, jinmin] chinese acad sci, inst semicond, r&d ctr semicond lighting, beijing 100083, peoples r china
摘要	We investigate the relation between the thickness of sapphire substrates and the extraction efficiency of LED. The increasing about 5% was observed in the simulations and experiments when the sapphire thickness changed from 100um to 200um. But the output power increasing is inconspicuous when the thickness is more than 200um. The structure on bottom face of sapphire substrates can enhance the extraction efficiency of GaN-based LED, too. The difference of output power between the flip-chip LED with smooth bottom surface and the LED with roughness bottom surface is about 50%, where only a common sapphire grinding process is used. But for those LEDs grown on patterned sapphire substrate the difference is only about 10%. Another kind of periodic pattern on the bottom of sapphire is fabricated by the dry etch method, and the output of the back-etched LEDs is improved about 50% than a common. case.
关键词	Gan-based Led Grinding Ray Tracing
学科领域	光电子学
主办者	SPIE.; Chinese Opt Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/7828
专题	中国科学院半导体研究所（2009年前）
通讯作者	Yang, H, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Yang, H,Chen, Y,Wang, LB,et al. The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2008:6841: M8410-M8410.

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