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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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半导体集成技术工程研... [2]
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2015 [1]
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4H-SiC结型势垒肖特基（JBS）二极管的设计与研制及其关键工艺研究
学位论文
, 北京: 中国科学院研究生院, 2015
Authors:
王进泽
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Submit date：2015/06/02
具有低特征导通电阻的SiC VDMOSFET结构及其制造方法
专利
专利类型: 发明, 公开日期: 2016-08-30
Inventors:
王进泽
;
杨香
;
颜伟
;
刘胜北
;
赵继聪
;
何志
;
王晓东
;
杨富华
Adobe PDF(607Kb)
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View/Download：1013/1
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Submit date：2016/08/30
