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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研究... [4]
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薛海韵 [1]
薛春来 [1]
成步文 [1]
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2009 [3]
2008 [1]
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材料科学与工程学报 [1]
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973基金,国家自然... [1]
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利用准分子激光退火制作SiGe或Ge量子点的方法
专利
专利类型: 发明, 申请日期: 2009-03-04, 公开日期: 2009-06-04, 2009-06-11
Inventors:
韩根全
;
曾玉刚
;
余金中
Adobe PDF(295Kb)
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View/Download:1400/204
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Submit date:2009/06/11
利用UHV/CVD低温生长SiGe材料的方法
专利
专利类型: 发明, 申请日期: 2009-03-04, 公开日期: 2009-06-04, 2009-06-11
Inventors:
韩根全
;
曾玉刚
;
余金中
Adobe PDF(366Kb)
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View/Download:1494/231
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Submit date:2009/06/11
无权访问的条目
期刊论文
Authors:
成步文
;
薛春来
;
罗丽萍
;
韩根全
;
曾玉刚
;
薛海韵
;
王启明
Adobe PDF(704Kb)
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View/Download:1713/493
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Submit date:2010/11/23
D-UHV/CVD 外延生长SiGe和ArF准分子激光退火制备量子点的研究
学位论文
, 北京: 中国科学院半导体研究所, 2008
Authors:
曾玉刚
Adobe PDF(2604Kb)
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View/Download:1009/25
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Submit date:2009/04/13