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Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 23, 页码: 231108
Authors:  Liu Z (Liu, Zhi);  Hu WX (Hu, Weixuan);  Li C (Li, Chong);  Li YM (Li, Yaming);  Xue CL (Xue, Chunlai);  Li CB (Li, Chuanbo);  Zuo YH (Zuo, Yuhua);  Cheng BW (Cheng, Buwen);  Wang QM (Wang, Qiming)
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Light-emitting-diodes  Ge  Si  Silicon  Gain  Gap  
Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 25, 页码: 252110
Authors:  Le LC (Le, L. C.);  Zhao DG (Zhao, D. G.);  Jiang DS (Jiang, D. S.);  Zhang SM (Zhang, S. M.);  Yang H (Yang, H.);  Li L (Li, L.);  Wu LL (Wu, L. L.);  Chen P (Chen, P.);  Liu ZS (Liu, Z. S.);  Li ZC (Li, Z. C.);  Fan YM (Fan, Y. M.);  Zhu JJ (Zhu, J. J.);  Wang H (Wang, H.)
Adobe PDF(1055Kb)  |  Favorite  |  View/Download:1106/354  |  Submit date:2013/03/20