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Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells
Liu Z (Liu, Zhi); Hu WX (Hu, Weixuan); Li C (Li, Chong); Li YM (Li, Yaming); Xue CL (Xue, Chunlai); Li CB (Li, Chuanbo); Zuo YH (Zuo, Yuhua); Cheng BW (Cheng, Buwen); Wang QM (Wang, Qiming)
2012
Source PublicationAPPLIED PHYSICS LETTERS
Volume101Issue:23Pages:231108
KeywordLight-emitting-diodes Ge Si Silicon Gain Gap
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-03-20
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23739
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Liu Z ,Hu WX ,Li C ,et al. Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells[J]. APPLIED PHYSICS LETTERS,2012,101(23):231108.
APA Liu Z .,Hu WX .,Li C .,Li YM .,Xue CL .,...&Wang QM .(2012).Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells.APPLIED PHYSICS LETTERS,101(23),231108.
MLA Liu Z ,et al."Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells".APPLIED PHYSICS LETTERS 101.23(2012):231108.
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