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Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 9, 页码: 1860-1864
Authors:  Niu Zhichuan;  Han Qin;  Ni Haiqiao;  Yang Xiaohong;  Xu Yingqiang;  Du Yun;  Zhang Shiyong;  Peng Hongling;  Zhao Huan;  Wu Donghai;  Li Shuying;  He Zhenhong;  Ren Zhengwei;  Wu Ronghan
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GaAs基GaAsSb/GaInAs双层量子阱的发光 期刊论文
发光学报, 2005, 卷号: 26, 期号: 4, 页码: 507-512
Authors:  屈玉华;  江德生;  边历峰;  孙征;  牛智川;  徐晓华
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快速热退火对高应变InGaAs/GaAs量子阱的影响 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 9, 页码: 1749-1752
Authors:  苗振华;  徐应强;  张石勇;  吴东海;  赵欢;  牛智川
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1.3μm GaAs基量子点垂直腔面发射激光器结构设计与分析 期刊论文
物理学报, 2005, 卷号: 54, 期号: 8, 页码: 3651-3656
Authors:  佟存柱;  牛智川;  韩勤;  吴荣汉
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多层InAs量子点的光致发光研究 期刊论文
半导体光电, 2005, 卷号: 26, 期号: 6, 页码: 519-522
Authors:  孔令民;  蔡加法;  陈厦平;  朱会丽;  吴正云;  牛智川
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GaAs/Si/AlAs异质结的DLTS实验研究 期刊论文
量子电子学报, 2005, 卷号: 22, 期号: 6, 页码: 923-926
Authors:  李永平;  田强;  牛智川
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Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy 期刊论文
ACTA PHYSICA SINICA, 2005, 卷号: 54, 期号: 6, 页码: 2950-2954
Authors:  Xu XH;  Niu ZC;  Ni HQ;  Xu YQ;  Zhang W;  He ZH;  Han Q;  Wu RH;  Jiang DS;  Niu, ZC, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zcniu@red.semi.ac.cn
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Molecular Beam Epitaxy  
Effect of Annealing on Structural and Magnetic Properties of a Thick (Ga,Mn)As Layer 期刊论文
Chinese Physics Letters, 2005, 卷号: 22, 期号: 2, 页码: 466-468
Authors:  Deng Jiajun;  Zhao Jianhua;  Jiang Chunping;  Zhang Yan;  Niu Zhichuan;  Yang Fuhua;  Wu Xiaoguang;  Zheng Houzhi
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大尺寸InAs/GaAs量子点的静压光谱 期刊论文
红外与毫米波学报, 2005, 卷号: 24, 期号: 3, 页码: 207-212
Authors:  马宝珊;  王晓东;  骆军委;  苏付海;  方再利;  丁琨;  牛智川;  李国华
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分子束外延生长的InAs/GaAs自组织量子点发光特性 期刊论文
人工晶体学报, 2005, 卷号: 34, 期号: 2, 页码: 384-386
Authors:  孙彦;  方志丹;  龚政;  苗振华;  牛智川
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