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分子束外延生长的(GaAs1-xSbx/InyGa1-yAs)/GaAs量子阱光致发光谱研究
徐晓华; 牛智川; 倪海桥; 徐应强; 张纬; 贺正宏; 韩勤; 吴荣汉; 江德生
2005
Source Publication物理学报
Volume54Issue:6Pages:2950-2954
Abstract报道了(GaAs1-xSbx/InyGa1-yAs)/GaAs量子阱结构的分子束外延生长与光致发光谱研究结果.变温与变激发功率光致发光谱的研究表明了此结构为二型量子阱发光性质.讨论了光谱双峰结构的跃迁机制.通过优化生长条件,获得了室温1.31μm发光.
metadata_83中国科学院半导体研究所
Subject Area半导体物理
Funding Organization国家自然科学基金,863计划资助,中国博士后科学基金支持的课题
Indexed ByCSCD
Language中文
CSCD IDCSCD:2104330
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16943
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
徐晓华,牛智川,倪海桥,等. 分子束外延生长的(GaAs1-xSbx/InyGa1-yAs)/GaAs量子阱光致发光谱研究[J]. 物理学报,2005,54(6):2950-2954.
APA 徐晓华.,牛智川.,倪海桥.,徐应强.,张纬.,...&江德生.(2005).分子束外延生长的(GaAs1-xSbx/InyGa1-yAs)/GaAs量子阱光致发光谱研究.物理学报,54(6),2950-2954.
MLA 徐晓华,et al."分子束外延生长的(GaAs1-xSbx/InyGa1-yAs)/GaAs量子阱光致发光谱研究".物理学报 54.6(2005):2950-2954.
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