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Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs
Zhu B (Zhu Bin); Han Q (Han Qin); Yang XH (Yang Xiao-Hong); Ni HQ (Ni Hai-Qiao); He JF (He Ji-Fang); Niu ZC (Niu Zhi-Chuan); Wang X (Wang Xin); Wang XP (Wang Xiu-Ping); Wang J (Wang Jie); Zhu, B, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: zhubin@semi.ac.cn
2010
Source PublicationCHINESE PHYSICS LETTERS
Volume27Issue:3Pages:Art. No. 038504
AbstractTop-illuminated metamorphic InGaAs p-i-n photodetectors (PDs) with 50% cut-off wavelength of 1.75 mu m at room temperature are fabricated on GaAs substrates. The PDs are grown by a solid-source molecular beam epitaxy system. The large lattice mismatch strain is accommodated by growth of a linearly graded buffer layer to create a high quality virtual InP substrate indium content in the metamorphic buffer layer linearly changes from 2% to 60%. The dark current densities are typically 5 x 10(-6) A/cm(2) at 0 V bias and 2.24 x 10(-4) A/cm(2) at a reverse bias of 5 V. At a wavelength of 1.55 mu m, the PDs have an optical responsivity of 0.48 A/W, a linear photoresponse up to 5 mW optical power at -4 V bias. The measured -3 dB bandwidth of a 32 mu m diameter device is 7 GHz. This work proves that InGaAs buffer layers grown by solid source MBE are promising candidates for GaAs-based long wavelength devices.
metadata_24其它
KeywordMolecular-beam Epitaxy Buffer Layers Dark Current Photodiodes Lasers
Subject Area光电子学
Funding OrganizationHi-Tech Research and Development Program of China 2007AA032421;National Basic Research Program of China 2006CB302802 ;National Natural Foundation of China 60876039
Indexed BySCI
Language英语
Date Available2010-04-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/11186
Collection集成光电子学国家重点实验室
Corresponding AuthorZhu, B, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: zhubin@semi.ac.cn
Recommended Citation
GB/T 7714
Zhu B ,Han Q ,Yang XH ,et al. Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs[J]. CHINESE PHYSICS LETTERS,2010,27(3):Art. No. 038504.
APA Zhu B .,Han Q .,Yang XH .,Ni HQ .,He JF .,...&Zhu, B, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: zhubin@semi.ac.cn.(2010).Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs.CHINESE PHYSICS LETTERS,27(3),Art. No. 038504.
MLA Zhu B ,et al."Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs".CHINESE PHYSICS LETTERS 27.3(2010):Art. No. 038504.
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