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硅基微纳结构材料制备及其锂离子电池性能研究 学位论文
, 北京: 中国科学院研究生院, 2018
Authors:  张均营
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Stable, high power, high efficiency picosecond ultraviolet generation at 355 nm in K 3 B 6 O 10 Br crystal 期刊论文
Optics Communications, 2018, 卷号: 416, 页码: 71–76
Authors:  Z.Y. Hou ;   L.R. Wang ;   M.J. Xia ;   D.X. Yan ;   Q.L. Zhang ;   L. Zhang ;   L.J. Liu ;   D.G. Xu ;   D.X. Zhang ;   X.Y. Wang ;   R.K. Li ;   C.T. Chen
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Fano resonances in bilayer phosphorene nanoring 期刊论文
Nanotechnology, 2018, 卷号: 29, 页码: 215202
Authors:  Rui Zhang ;   Zhenhua Wu ;   X J Li ;   L L Li ;   Qiao Chen ;   Yun-Mei Li ;   F M Peeters
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Valley Zeeman splitting of monolayer MoS 2 probed by low-field magnetic circular dichroism spectroscopy at room temperature 期刊论文
Applied Physics Letters, 2018, 卷号: 112, 期号: 15, 页码: 153105
Authors:  Y. J. Wu;   C. Shen;   Q. H. Tan;   J. Shi;   X. F. Liu;   Z. H. Wu;   J. Zhang;   P. H. Tan;   H. Z. Zheng
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Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2018, 卷号: 504, 页码: 7-12
Authors:  X.F. Liu ;   G.G. Yan ;   B. Liu ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   W.S. Zhao ;   L. Wang ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
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Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 34-40
Authors:  J. Yang ;   S.T. Liu ;   X.W. Wang ;   D.G. Zhao ;   D.S. Jiang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   F. Liang ;   W. Liu ;   L.Q. Zhang ;   H. Yang ;   W.J. Wang ;   M. Li
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The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells 期刊论文
Optical Materials, 2018, 卷号: 86, 页码: 460-463
Authors:  S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Y. Peng ;   L.Q. Zhang ;   W.J. Wang ;   M. Li ;   Y.T. Zhang ;   G.T. Du
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Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 690-695
Authors:  S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Q. Zhang ;   W.J. Wang ;   M. Li ;   Y.T. Zhang ;   G.T. Du
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Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文
AIP Advances, 2017, 卷号: 7, 页码: 035103
Authors:  P. Chen;  D. G. Zhao;  D. S. Jiang;  H. Long;  M. Li;  J. Yang;  J. J. Zhu;  Z. S. Liu;  X. J. Li;  W. Liu;  X. Li;  F. Liang;  J. P. Liu;  B. S. Zhang;  H. Yang
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Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
Authors:  X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN;  J. J. ZHU;  J. YANG;  W. LIU;  X. G. HE;  X. J. LI;  F. LIANG;  S. T. LIU;  Y. XING;  L. Q. ZHANG;  M. LI;  J. ZHANG
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