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High power885 nm laser diodes with graded optical expand structures for small divergence angle 期刊论文
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 卷号: 40, 期号: 12, 页码: 2382-2387
Authors:  Wang, Jun;  Bai, Yiming;  Liu, Yuanyuan;  He, Weili;  Xiong, Cong;  Wang, Cuiluan;  Feng, Xiaoming;  Zhong, Li;  Liu, Suping;  Ma, Xiaoyu;  Wang, J.(wangjun@semi.ac.cn)
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Energy Efficiency  Epitaxial Growth  High Power Lasers  Optimization  Pumping(Laser)  Quantum Well Lasers  Semiconductor Quantum Wells  
Electrically Controllable Surface Magnetism on the Surface of Topological Insulators 期刊论文
PHYSICAL REVIEW LETTERS, 2011, 卷号: 106, 期号: 9, 页码: Article no.97201
Authors:  Zhu JJ;  Yao DX;  Zhang SC;  Chang K;  Zhu, JJ, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China.
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Hgte Quantum-wells  Single Dirac Cone  Spin Chirality  Phase  Bi2te3  
Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy 期刊论文
Optoelectronics Letters, 2011, 卷号: 7, 期号: 5, 页码: 325-329
Authors:  Zhu, Yan;  Ni, Hai-qiao;  Wang, Hai-li;  He, Ji-fang;  Li, Mi-feng;  Shang, Xiang-jun;  Niu, Zhi-chuan;  Zhu, Y.(ttcow@126.com)
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Epitaxial Growth  Gallium Arsenide  Growth(Materials)  Molecular Beam Epitaxy  Semiconducting Gallium  Semiconducting Indium  Semiconductor Quantum Wells  
Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 5, 页码: 54320
Authors:  Ning JQ;  Xu SJ;  Ruan XZ;  Ji Y;  Zheng HZ;  Sheng WD;  Liu HC;  Ning, JQ (reprint author), Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China, sjxu@hkucc.hku.hk
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Wells  Relaxation  Hole  Photoluminescence  Semiconductors  Localization  Transitions  Excitons  Carriers  Growth  
Determining the sign of g factor via time-resolved Kerr rotation spectroscopy with a rotatable magnetic field 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 8, 页码: 87503
Authors:  Gu XF;  Qian X;  Ji Y;  Chen L;  Zhao JH;  Ji, Y (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China, jiyang@semi.ac.cn
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Electron G-factors  Quantum-wells  Gaas  Spintronics  Beats  
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43004
Authors:  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Zhu, Yan;  Chang, Xiuying;  Ni, Haiqiao;  Xu, Yingqiang;  Niu, Zhichuan;  He, J.(hejifang@semi.ac.cn)
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Atomic Force Microscopy  Buffer Layers  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Germanium  Growth Temperature  High Resolution Transmission Electron Microscopy  Molecular Beam Epitaxy  Molecular Beams  Semiconducting Gallium  Semiconductor Device Structures  Semiconductor Quantum Wells  
Quantum coherence and entanglement induced by the continuum between distant localized states 期刊论文
PHYSICAL REVIEW A, 2011, 卷号: 83, 期号: 4, 页码: Article no.42112
Authors:  Ping J;  Li XQ;  Gurvitz S;  Ping, J, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. shmuel.gurvitz@weizmann.ac.il
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Relaxation  Systems  Wells  Decay  
Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2011, 卷号: 43, 期号: 4, 页码: 869-873
Authors:  Li TF;  Chen YH;  Lei W;  Zhou XL;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
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Quantum Dots  Light-emission  Wells  Photoluminescence  
Microscopic study on the carrier distribution in optoelectronic device structures: Experiment and modeling 期刊论文
Proceedings of SPIE- The International Society for Optical Engineering, 2011, 卷号: 8308, 页码: 83081Y
Authors:  Huang, Wenchao;  Xia, Hui;  Wang, Shaowei;  Deng, Honghai;  Wei, Peng;  Li, Lu;  Liu, Fengqi;  Li, Zhifeng;  Li, Tianxin;  Huang, W.(wc_huang@mail.sitp.ac.cn)
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Capacitance  Carrier Concentration  Characterization  Diffusion  Optoelectronic Devices  Photodetectors  Scanning  Semiconductor Device Structures  Semiconductor Devices  Semiconductor Quantum Wells  Thermionic Emission  
Preparation of SnS2 colloidal quantum dots and their application in organic/inorganic hybrid solar cells 期刊论文
Nanoscale Research Letters, 2011, 卷号: 6, 页码: 1-8
Authors:  Tan, Furui;  Qu, Shengchun;  Wu, Ju;  Liu, Kong;  Zhou, Shuyun;  Wang, Zhanguo;  Qu, S.(qsc@semi.ac.cn)
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Conjugated Polymers  Photovoltaic Effects  Polymer Blends  Semiconductor Quantum Dots  Semiconductor Quantum Wells  Solar Cells  Surface Active Agents