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GaAs基超短脉冲激光泵浦源及频率转换器件研制 学位论文
, 北京: 中国科学院研究生院, 2017
Authors:  魏思航
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锁模激光器  单光子频率转换  二阶非线性  布拉格反射波导  
Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors 期刊论文
NANOSCALE, 2014, 卷号: 6, 期号: 13, 页码: 7226-7231
Authors:  Yang, SX;  Tongay, S;  Li, Y;  Yue, Q;  Xia, JB;  Li, SS;  Li, JB;  Wei, SH
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Origin of the failed ensemble average rule for the band gaps of disordered nonisovalent semiconductor alloys 期刊论文
PHYSICAL REVIEW B, 2014, 卷号: 90, 期号: 11, 页码: 115201
Authors:  Ma, J;  Deng, HX;  Luo, JW;  Wei, SH
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Selection rule of preferred doping site for n-type oxides 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 100, 期号: 26, 页码: 262109
Authors:  Li, C;  Li, JB;  Li, SS;  Xia, JB;  Wei, SH
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Effect of hydrogen passivation on the electronic structure of ionic semiconductor nanostructures 期刊论文
PHYSICAL REVIEW B, 2012, 卷号: 85, 期号: 19, 页码: 195328
Authors:  Deng, HX;  Li, SS;  Li, JB;  Wei, SH
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Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs 期刊论文
PHYSICAL REVIEW B, 2010, 卷号: 82, 期号: 19, 页码: Art. No. 193204
Authors:  Deng HX (Deng Hui-Xiong);  Li JB (Li Jingbo);  Li SS (Li Shu-Shen);  Peng HW (Peng Haowei);  Xia JB (Xia Jian-Bai);  Wang LW (Wang Lin-Wang);  Wei SH (Wei Su-Huai);  Deng, HX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.
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Impurities  Gaas1-xnx  Nitrogen  Gainnas  States  Traps  
Origin of antiferromagnetism in CoO: A density functional theory study 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 16, 页码: Art. No. 162508
Authors:  Deng HX (Deng Hui-Xiong);  Li JB (Li Jingbo);  Li SS (Li Shu-Shen);  Xia JB (Xia Jian-Bai);  Walsh A (Walsh Aron);  Wei SH (Wei Su-Huai);  Deng, HX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:;
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Origin of insulating behavior of the p-type LaAlO3/SrTiO3 interface: Polarization-induced asymmetric distribution of oxygen vacancies 期刊论文
PHYSICAL REVIEW B, 2010, 卷号: 82, 期号: 12, 页码: Art. No. 125412
Authors:  Zhang LX (Zhang Lixin);  Zhou XF (Zhou Xiang-Feng);  Wang HT (Wang Hui-Tian);  Xu JJ (Xu Jing-Jun);  Li JB (Li Jingbo);  Wang EG (Wang E. G.);  Wei SH (Wei Su-Huai);  Zhang, LX, Nankai Univ, Sch Phys, Tianjin 300071, Peoples R China.
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Initio Molecular-dynamics  Electron Gases  Heterostructures  Transition  
MOCVD生长温度对氧化锌薄膜结构及发光性能的影响 期刊论文
人工晶体学报, 2010, 卷号: 39, 期号: 1, 页码: 34-38,43
Authors:  王振华;  杨安丽;  刘祥林;  魏鸿源;  焦春美;  朱勤生;  杨少延;  王占国
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Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 21, 页码: Art. No. 212109
Authors:  Li YH;  Walsh A;  Chen SY;  Yin WJ;  Yang JH;  Li JB;  Da Silva JLF;  Gong XG;  Wei SH;  Li YH Fudan Univ Dept Phys Shanghai 200433 Peoples R China. E-mail Address:;
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Ab Initio Calculations  Band Structure  Cadmium Compounds  Iii-v Semiconductors  Ii-vi Semiconductors  Iv-vi Semiconductors  Zinc Compounds