SEMI OpenIR

Browse/Search Results:  1-10 of 32 Help

Selected(0)Clear Items/Page:    Sort:
GaAs基超短脉冲激光泵浦源及频率转换器件研制 学位论文
, 北京: 中国科学院研究生院, 2017
Authors:  魏思航
Adobe PDF(5828Kb)  |  Favorite  |  View/Download:290/30  |  Submit date:2017/05/31
锁模激光器  单光子频率转换  二阶非线性  布拉格反射波导  
Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors 期刊论文
NANOSCALE, 2014, 卷号: 6, 期号: 13, 页码: 7226-7231
Authors:  Yang, SX;  Tongay, S;  Li, Y;  Yue, Q;  Xia, JB;  Li, SS;  Li, JB;  Wei, SH
Adobe PDF(1469Kb)  |  Favorite  |  View/Download:404/70  |  Submit date:2015/05/11
Origin of the failed ensemble average rule for the band gaps of disordered nonisovalent semiconductor alloys 期刊论文
PHYSICAL REVIEW B, 2014, 卷号: 90, 期号: 11, 页码: 115201
Authors:  Ma, J;  Deng, HX;  Luo, JW;  Wei, SH
Adobe PDF(420Kb)  |  Favorite  |  View/Download:439/139  |  Submit date:2015/03/25
Selection rule of preferred doping site for n-type oxides 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 100, 期号: 26, 页码: 262109
Authors:  Li, C;  Li, JB;  Li, SS;  Xia, JB;  Wei, SH
Adobe PDF(1182Kb)  |  Favorite  |  View/Download:1024/361  |  Submit date:2013/02/07
Effect of hydrogen passivation on the electronic structure of ionic semiconductor nanostructures 期刊论文
PHYSICAL REVIEW B, 2012, 卷号: 85, 期号: 19, 页码: 195328
Authors:  Deng, HX;  Li, SS;  Li, JB;  Wei, SH
Adobe PDF(502Kb)  |  Favorite  |  View/Download:937/329  |  Submit date:2013/03/17
Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs 期刊论文
PHYSICAL REVIEW B, 2010, 卷号: 82, 期号: 19, 页码: Art. No. 193204
Authors:  Deng HX (Deng Hui-Xiong);  Li JB (Li Jingbo);  Li SS (Li Shu-Shen);  Peng HW (Peng Haowei);  Xia JB (Xia Jian-Bai);  Wang LW (Wang Lin-Wang);  Wei SH (Wei Su-Huai);  Deng, HX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. jbli@semi.ac.cn
Adobe PDF(379Kb)  |  Favorite  |  View/Download:1337/324  |  Submit date:2010/12/27
Impurities  Gaas1-xnx  Nitrogen  Gainnas  States  Traps  
Origin of antiferromagnetism in CoO: A density functional theory study 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 16, 页码: Art. No. 162508
Authors:  Deng HX (Deng Hui-Xiong);  Li JB (Li Jingbo);  Li SS (Li Shu-Shen);  Xia JB (Xia Jian-Bai);  Walsh A (Walsh Aron);  Wei SH (Wei Su-Huai);  Deng, HX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jbli@semi.ac.cn;  suhuai.wei@nrel.gov
Adobe PDF(257Kb)  |  Favorite  |  View/Download:998/306  |  Submit date:2010/05/07
Exchange  
Origin of insulating behavior of the p-type LaAlO3/SrTiO3 interface: Polarization-induced asymmetric distribution of oxygen vacancies 期刊论文
PHYSICAL REVIEW B, 2010, 卷号: 82, 期号: 12, 页码: Art. No. 125412
Authors:  Zhang LX (Zhang Lixin);  Zhou XF (Zhou Xiang-Feng);  Wang HT (Wang Hui-Tian);  Xu JJ (Xu Jing-Jun);  Li JB (Li Jingbo);  Wang EG (Wang E. G.);  Wei SH (Wei Su-Huai);  Zhang, LX, Nankai Univ, Sch Phys, Tianjin 300071, Peoples R China.
Adobe PDF(333Kb)  |  Favorite  |  View/Download:1031/330  |  Submit date:2010/10/11
Initio Molecular-dynamics  Electron Gases  Heterostructures  Transition  
MOCVD生长温度对氧化锌薄膜结构及发光性能的影响 期刊论文
人工晶体学报, 2010, 卷号: 39, 期号: 1, 页码: 34-38,43
Authors:  王振华;  杨安丽;  刘祥林;  魏鸿源;  焦春美;  朱勤生;  杨少延;  王占国
Adobe PDF(733Kb)  |  Favorite  |  View/Download:1125/259  |  Submit date:2011/08/16
Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 21, 页码: Art. No. 212109
Authors:  Li YH;  Walsh A;  Chen SY;  Yin WJ;  Yang JH;  Li JB;  Da Silva JLF;  Gong XG;  Wei SH;  Li YH Fudan Univ Dept Phys Shanghai 200433 Peoples R China. E-mail Address: a.walsh@ucl.ac.uk;  swei@nrel.gov
Adobe PDF(90Kb)  |  Favorite  |  View/Download:1182/482  |  Submit date:2010/03/08
Ab Initio Calculations  Band Structure  Cadmium Compounds  Iii-v Semiconductors  Ii-vi Semiconductors  Iv-vi Semiconductors  Zinc Compounds