SEMI OpenIR

Browse/Search Results:  1-4 of 4 Help

Selected(0)Clear Items/Page:    Sort:
(In)GaN/AlGaN/GaN异质结构中的二维电子和空穴气研究 学位论文
, 北京: 中国科学院研究生院, 2017
Authors:  闫俊达
Adobe PDF(5390Kb)  |  Favorite  |  View/Download:1160/65  |  Submit date:2017/06/05
氮化镓  异质结构  二维空穴气  二维电子气  高电子迁移率晶体管  
Theoretical investigations on the N-polar GaN/AlxGa1-xN/GaN heterostructures: Considering the existence of both two-dimensional hole and electron gases 期刊论文
Journal of Applied Physics, 2016, 卷号: 120, 期号: 12, 页码: 124501
Authors:  Junda Yan;  Quan Wang;  Xiaoliang Wang;  Chun Feng;  Hongling Xiao;  Shiming Liu;  Jiamin Gong;  Fengqi Liu;  Baiquan Li
Adobe PDF(1447Kb)  |  Favorite  |  View/Download:218/3  |  Submit date:2017/03/10
Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs 期刊论文
Semiconductor Science and Technology, 2016, 卷号: 31, 期号: 12, 页码: 125003
Authors:  Wei Li;  Quan Wang;  Xiangmi Zhan;  Junda Yan;  Lijuan Jiang;  Haibo Yin;  Jiamin Gong;  Xiaoliang Wang;  Fengqi Liu;  Baiquan Li;  Zhanguo Wang
Adobe PDF(1907Kb)  |  Favorite  |  View/Download:257/8  |  Submit date:2017/03/10
一种氮化镓基绝缘栅双极晶体管制备方法及其产品 专利
专利类型: 发明, 公开日期: 2016-09-12
Inventors:  王晓亮;  闫俊达;  李百泉;  王权;  肖红领;  冯春;  殷海波;  姜丽娟;  邱爱芹;  介芳
Adobe PDF(508Kb)  |  Favorite  |  View/Download:205/1  |  Submit date:2016/09/12