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Numerical optimization of carrier confinement characteristics in (AlxGa1-xN/AlN)SLs/GaN heterostructures 期刊论文
PHYSICA B-CONDENSED MATTER, 2012, 卷号: 407, 期号: 18, 页码: 3920-3924
Authors:  Ding JQ (Ding, Jieqin);  Wang XL (Wang, Xiaoliang);  Xiao HL (Xiao, Hongling);  Wang CM (Wang, Cuimei);  Yin HB (Yin, Haibo);  Chen H (Chen, Hong);  Feng C (Feng, Chun);  Jiang LJ (Jiang, Lijuan)
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An investigation on InxGa1-xN/GaN multiple quantum well solar cells 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 26, 页码: Art. No. 265103
Authors:  Deng QW;  Wang XL;  Xiao HL;  Wang CM;  Yin HB;  Chen H;  Hou QF;  Lin DF;  Li JM;  Wang ZG;  Hou X
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Fundamental-band Gap  Phase-separation  Efficiency  Inn  Emission  Layers  Model  
Theoretical study on InxGa1-xN/GaN quantum dots solar cell 期刊论文
PHYSICA B-CONDENSED MATTER, 2011, 卷号: 406, 期号: 1, 页码: 73-76
Authors:  Deng QW;  Wang XL;  Yang CB;  Xiao HL;  Wang CM;  Yin HB;  Hou QF;  Li JM;  Wang ZG;  Hou X;  Deng, QW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. daven@semi.ac.cn
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Efficiency  Quantum Dot  Gan  Efficiency  
InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 2, 页码: Article no.28402
Authors:  Zhang XB;  Wang XL;  Xiao HL;  Yang CB;  Hou QF;  Yin HB;  Chen H;  Wang ZG;  Zhang, XB, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. soffeezxb@163.com
Adobe PDF(606Kb)  |  Favorite  |  View/Download:1928/513  |  Submit date:2011/07/05
Ingan  Solar Cell  Multiple Quantum Wells  In1-xgaxn Alloys  Band-gap  Inn  
Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 1, 页码: Article no.18401
Authors:  Deng QW;  Wang XL;  Yang CB;  Xiao HL;  Wang CM;  Yin HB;  Hou QF;  Bi Y;  Li JM;  Wang ZG;  Hou X;  Deng, QW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. daven@semi.ac.cn
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Efficiency  
High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 3, 页码: 33002
Authors:  Yin, Haibo;  Wang, Xiaoliang;  Ran, Junxue;  Hu, Guoxin;  Zhang, Lu;  Xiao, Hongling;  Li, Jing;  Li, Jinmin;  Yin, H.(hbyin@semi.ac.cn)
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Epitaxial Growth  Gallium Nitride  
MOCVD设备研制及氮化物材料生长研究 学位论文
, 北京: 中国科学院研究生院, 2010
Authors:  殷海波
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用于金属有机物化学沉积设备的扇形进气喷头 专利
专利类型: 发明, 专利号: CN201010033960.X, 公开日期: 2011-08-31, 2011-08-31, 2011-08-31
Inventors:  胡国新;  王晓亮;  冉军学;  肖红领;  殷海波;  张露;  李晋闽
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用于金属有机物化学沉积设备的衬托盘及其制作工艺 专利
专利类型: 发明, 专利号: CN201010033965.2, 公开日期: 2011-08-31
Inventors:  殷海波;  王晓亮;  胡国新;  冉军学;  肖红领;  张露;  李晋闽
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用于金属有机物化学沉积设备的气路装置 专利
专利类型: 发明, 专利号: CN201010033967.1, 公开日期: 2011-08-31
Inventors:  冉军学;  王晓亮;  胡国新;  肖红领;  张露;  殷海波;  李晋闽
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