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The Comparison of Current Ratio ION/IOFF and Mobility Between SiGe Substrate and GaAs Substrate In₀.₂₃Ga₀.₇₇As Channel MOSFETs 期刊论文
IEEE Transactions on Electron Devices, 2016, 卷号: 63, 期号: 8, 页码: 3084-3087
Authors:  Xiangting Kong;  Renrong Liang;  Xuliang Zhou;  Shiyan Li;  Mengqi Wang;  Honggang Liu;  Jing Wang;  Wei Wang;  Jiaoqing Pan
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High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio 𝐼on/𝐼off Grown on Semi-insulating GaAs Substrates by MOCVD 期刊论文
Chinese Physics Letters, 2015, 卷号: 32, 期号: 3, 页码: 37301-37303
Authors:  XiangTing Kong;  XuLiang Zhou;  ShiYan Li;  LiJun Qiao;  HongGang Liu;  Wei Wang;  JiaoQing Pan
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High-Mobility In0.23Ga0.77As Channel MOSFETs Grown on Ge/Si Virtual Substrate by MOCVD 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 卷号: 62, 期号: 5, 页码: 1456-1459
Authors:  Xiangting Kong;  Xuliang Zhou;  Shiyan Li;  Hudong Chang;  Honggang Liu;  Jing Wang;  Renrong Liang;  Wei Wang;  Jiaoqing Pan
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基于非线性偏振旋转效应的全光微波倍频器 专利
专利类型: 发明, 公开日期: 2012-07-18
Inventors:  郑建宇;  祝宁华;  刘建国;  王礼贤;  梁洪刚
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