SEMI OpenIR

Browse/Search Results:  1-10 of 38 Help

  Show only claimed items
Selected(0)Clear Items/Page:    Sort:
Monolithic integration of InGaAs/InP multiple quantum wells on SOI substrates for photonic devices 期刊论文
JOURNAL OF APPLIED PHYSICS, 2018, 卷号: 123, 期号: 5, 页码: 053102
Authors:  Zhibo Li;   Mengqi Wang;   Xin Fang;   Yajie Li;   Xuliang Zhou;   Hongyan Yu;   Pengfei Wang;   Wei Wang;   Jiaoqing Pan
Adobe PDF(2095Kb)  |  Favorite  |  View/Download:35/0  |  Submit date:2019/11/15
InP-based directly modulated monolithic integrated few-mode transmitter 期刊论文
Photonics Research, 2018, 卷号: 6, 期号: 5, 页码: 463-467
Authors:  ZHAOSONG LI ;   DAN LU;   YIMING HE ;   FANGYUAN MENG ;   XULIANG ZHOU ;   JIAOQING PAN
Adobe PDF(1398Kb)  |  Favorite  |  View/Download:12/0  |  Submit date:2019/11/15
Pressure-Induced Metallization and Robust Superconductivity in Pristine 1T-SnSe 2 期刊论文
Advanced Electronic Materials, 2018, 卷号: 4, 期号: 8, 页码: 1800155
Authors:  Yonghui Zhou;  Bowen Zhang;  Xuliang Chen;  Chuanchuan Gu;  Chao An;  Ying Zhou;  Kaiming Cai;  Yifang Yuan;  Chunhua Chen;  Hao Wu;  Ranran Zhang;  Changyong Park;  Yimin Xiong;  Xiuwen Zhang;  Kaiyou Wang;  Zhaorong Yang
Adobe PDF(143Kb)  |  Favorite  |  View/Download:19/0  |  Submit date:2019/11/12
Proposal of an InP-based few-mode transmitter based on multimode interference couplers for wavelength division multiplexing and mode division multiplexing applications 期刊论文
Chinese Optics Letters, 2016, 卷号: 14, 期号: 8, 页码: 080601
Authors:  Zhaosong Li;  Dan Lu;  Bing Zuo;  Song Liang;  Xuliang Zhou;  Jiaoqing Pan
Adobe PDF(717Kb)  |  Favorite  |  View/Download:270/2  |  Submit date:2017/03/10
The Comparison of Current Ratio ION/IOFF and Mobility Between SiGe Substrate and GaAs Substrate In₀.₂₃Ga₀.₇₇As Channel MOSFETs 期刊论文
IEEE Transactions on Electron Devices, 2016, 卷号: 63, 期号: 8, 页码: 3084-3087
Authors:  Xiangting Kong;  Renrong Liang;  Xuliang Zhou;  Shiyan Li;  Mengqi Wang;  Honggang Liu;  Jing Wang;  Wei Wang;  Jiaoqing Pan
Adobe PDF(1350Kb)  |  Favorite  |  View/Download:267/3  |  Submit date:2017/03/10
Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio 期刊论文
Chinese Physics Letters, 2015, 卷号: 32, 期号: 2, 页码: 028101
Authors:  Li ShiYan;  Zhou XuLiang;  Kong XiangTing;  Li MengKe;  Mi JunPing;  Bian Jing;  Wang Wei;  Pan JiaoQing
Adobe PDF(1238Kb)  |  Favorite  |  View/Download:215/0  |  Submit date:2016/03/23
Evaluation of growth mode and optimization of growth parameters for GaAs epitaxy in V-shaped 期刊论文
Journal of Crystal Growth, 2015, 卷号: 426, 页码: 147-152
Authors:  Shiyan Li;  Xuliang Zhou;  Xiangting Kong;  Mengke Li;  Junping Mi;  Jing Bian;  Wei Wang;  Jiaoqing Pan
Adobe PDF(3085Kb)  |  Favorite  |  View/Download:154/2  |  Submit date:2016/03/23
A Directional-Emission 1060nm GaAs-InGaAs microcylinder laser 期刊论文
IEEE Photonics Technology Letters, 2015, 卷号: 27, 期号: 6, 页码: 569-572
Authors:  Mengke Li;  Xuliang Zhou;  Ying Ding;  Weixi Chen;  Hongyan Yu;  Qiang Kan;  Shiyan Li;  Junping Mi;  Wei Wang;  Jiaoqing Pan
Adobe PDF(660Kb)  |  Favorite  |  View/Download:178/1  |  Submit date:2016/03/23
High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio 𝐼on/𝐼off Grown on Semi-insulating GaAs Substrates by MOCVD 期刊论文
Chinese Physics Letters, 2015, 卷号: 32, 期号: 3, 页码: 37301-37303
Authors:  XiangTing Kong;  XuLiang Zhou;  ShiYan Li;  LiJun Qiao;  HongGang Liu;  Wei Wang;  JiaoQing Pan
Adobe PDF(827Kb)  |  Favorite  |  View/Download:177/2  |  Submit date:2016/03/23
High-Mobility In0.23Ga0.77As Channel MOSFETs Grown on Ge/Si Virtual Substrate by MOCVD 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 卷号: 62, 期号: 5, 页码: 1456-1459
Authors:  Xiangting Kong;  Xuliang Zhou;  Shiyan Li;  Hudong Chang;  Honggang Liu;  Jing Wang;  Renrong Liang;  Wei Wang;  Jiaoqing Pan
Adobe PDF(2100Kb)  |  Favorite  |  View/Download:144/3  |  Submit date:2016/03/23