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Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 8, 页码: 83003
Authors:  Bi, Yang;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai;  Peng, Enchao;  Lin, Defeng;  Feng, Chun;  Jiang, Lijuan,;  Bi, Y.(ybi@semi.ac.cn)
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Aluminum  Electron Mobility  Gallium Nitride  High Electron Mobility Transistors  Indium  Poisson Equation  Polarization  Two Dimensional Electron Gas  
Room temperature GaN/AlGaN self-mixing terahertz detector enhanced by resonant antennas 期刊论文
Applied Physics Letters, 2011, 卷号: 98, 期号: 25, 页码: 252103
Authors:  Sun, Y.F.;  Sun, J.D.;  Zhou, Y.;  Tan, R.B.;  Zeng, C.H.;  Xue, W.;  Qin, H.;  Zhang, B.S.;  Wu, D.M.,;  Wu, D. M.(dmwu2008@sinano.ac.cn)
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Antennas  Dc Power Transmission  Electron Mobility  High Electron Mobility Transistors  Low Pass Filters  Terahertz Wave Detectors  
T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablation 期刊论文
Applied Physics A: Materials Science and Processing, 2011, 页码: 1-5
Authors:  Du, Y.D.;  Cao, H.Z.;  Yan, W.;  Han, W.H.;  Liu, Y.;  Dong, X.Z.;  Zhang, Y.B.;  Jin, F.;  Zhao, Z.S.;  Yang, F.H.;  Duan, X.M.;  Han, W.H.(weihua@semi.ac.cn)
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Ablation  Drain Current  Fabrication  Gallium Nitride  High Electron Mobility Transistors  Photoresists  Ultrashort Pulses  
Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 5, 页码: Art. No. 052101
Authors:  Yang AL;  Song HP;  Liu XL;  Wei HY;  Guo Y;  Zheng GL;  Jiao CM;  Yang SY;  Zhu QS;  Wang ZG;  Yang AL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: alyang@semi.ac.cn;  xlliu@semi.ac.cn
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Aluminium Compounds  Conduction Bands  Energy Gap  High Electron Mobility Transistors  Iii-v Semiconductors  Magnesium Compounds  Passivation  Semiconductor Heterojunctions  Valence Bands  Wide Band Gap Semiconductors  X-ray Photoelectron Spectra  
Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy 期刊论文
CHINESE PHYSICS B, 2008, 卷号: 17, 期号: 3, 页码: 1119-1123
Authors:  Gao, HL;  Zeng, YP;  Wang, BQ;  Zhu, ZP;  Wang, ZG;  Gao, HL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: hlgao@semi.ac.cn
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Molecular Beam Epitaxy  Semiconducting Iii-v Materials  High Electron Mobility Transistors  
Self-consistent analysis of double-delta-doped InAlAs/InGaAs/InP HEMTs 期刊论文
CHINESE PHYSICS, 2006, 卷号: 15, 期号: 11, 页码: 2735-2741
Authors:  Li DL (Li Dong-Lin);  Zeng YP (Zeng Yi-Ping);  Li, DL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. E-mail: ldl@red.semi.ac.cn
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Two-dimensional Electron Gas  High Electron Mobility Transistor  Self-consistent Calculation  Inalas/ingaas Heterostructure  Charge Control Model  Electron-mobility Transistors  Pseudomorphic Ingaas Hemt  Field-effect Transistor  Quantum-well  Algaas/ingaas Phemts  Gate Recess  High-speed  Heterojunction  Channel  
High-quality metamorphic HEMT grown on GaAs substrates by MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
Authors:  Zeng YP;  Cao X;  Cui LJ;  Kong MY;  Pan L;  Wang BQ;  Zhu ZP;  Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
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Molecular Beam Epitaxy  High Electron Mobility Transistors  Density  
Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 231, 期号: 4, 页码: 520-524
Authors:  Cao X;  Zeng YP;  Kong MY;  Pan LA;  Wang BQ;  Zhu ZP;  Wang XG;  Chang Y;  Chu JH;  Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
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Molecular Beam Epitaxy  Semiconducting Iii-v Materials  High Electron Mobility Transistors  Electron-mobility Transistor  Carrier Density  Quantum-wells  Band-gap  
High-quality metamorphic HEMT grown on GaAs substrates by MBE 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 210-213
Authors:  Zeng YP;  Cao X;  Cui LJ;  Kong MY;  Pan L;  Wang BQ;  Zhu ZP;  Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(148Kb)  |  Favorite  |  View/Download:865/235  |  Submit date:2010/08/12
Molecular Beam Epitaxy  High Electron Mobility Transistors  Density