High-quality metamorphic HEMT grown on GaAs substrates by MBE

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	High-quality metamorphic HEMT grown on GaAs substrates by MBE
	Zeng YP; Cao X; Cui LJ; Kong MY; Pan L; Wang BQ; Zhu ZP; Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
	2001
会议名称	11th International Conference on Molecular Beam Epitaxy (MBE-XI)
会议录名称	JOURNAL OF CRYSTAL GROWTH, 227
页码	210-213
会议日期	SEP 11-15, 2000
会议地点	BEIJING, PEOPLES R CHINA
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-0248
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Metamorphic high electron mobility transistor (M-HEMT) structures have been grown on GaAs substrates by molecular beam epitaxy (MBE). Linearly graded and the step-graded InGaAs and InAlAs buffet layers hal e been compared, and TEM, PL and low-temperature Hall have been used to analyze the properties of the buffer layers and the M-HEMT structure. For a single-delta-doped M-HEMT structure with an In0.53Ga0.47As channel layer and a 0.8 mum step-graded InAlAs buffer layer, room-temperature mobility of 9000 cm(2)/V s and a sheet electron density as high as 3.6 x 10(12)/cm(2) are obtained. These results are nearly equivalent to those obtained for the same structure grown on an InP substrate. A basic M-HEMT device with 1 mum gate was fabricated, and g(m) is larger than 400 mS/mm. (C) 2001 Elsevier Science B.V. All rights reserved.
关键词	Molecular Beam Epitaxy High Electron Mobility Transistors Density
学科领域	半导体材料
主办者	China Natl Nat Sci Fdn.; Inst Semiconductor, CAS.; Inst Phys, CAS.; State Key Lab Funct Mat Informat.; Inst Met, CAS.; Hong Kong Univ Sci & Technol.; Univ Hong Kong, Lab New Mat.; Chinese Acad Sci, Lab New Mat.; VG Semicon.; Riber.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14931
专题	中国科学院半导体研究所（2009年前）
通讯作者	Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Zeng YP,Cao X,Cui LJ,et al. High-quality metamorphic HEMT grown on GaAs substrates by MBE[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2001:210-213.

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