Browse/Search Results:  1-10 of 40 Help

Selected(0)Clear Items/Page:    Sort:
Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 5, 页码: 54320
Authors:  Ning JQ;  Xu SJ;  Ruan XZ;  Ji Y;  Zheng HZ;  Sheng WD;  Liu HC;  Ning, JQ (reprint author), Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China,
Adobe PDF(1050Kb)  |  Favorite  |  View/Download:809/116  |  Submit date:2012/01/06
Wells  Relaxation  Hole  Photoluminescence  Semiconductors  Localization  Transitions  Excitons  Carriers  Growth  
Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 2, 页码: Article no.27801
Authors:  Yang XR;  Xu B;  Wang HF;  Zhao GQ;  Shi SH;  Shen XZ;  Li JF;  Wang ZG;  Yang, XR, Handan Coll, Dept Phys & Elect Engn, Handan 056005, Peoples R China.
Adobe PDF(483Kb)  |  Favorite  |  View/Download:1502/327  |  Submit date:2011/07/05
Continuous-wave Operation  Emission  Lasers  Wavelength  Excitons  Energy  
Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 15, 页码: Art. No. 151904
Authors:  Yang AL;  Song HP;  Liang DC;  Wei HY;  Liu XL;  Jin P;  Qin XB;  Yang SY;  Zhu QS;  Wang ZG;  Yang, AL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:;
Adobe PDF(341Kb)  |  Favorite  |  View/Download:1920/463  |  Submit date:2010/05/04
Alloying  Annealing  Electrical Conductivity  Excitons  Ii-vi Semiconductors  Magnesium Compounds  Mocvd Coatings  Photoluminescence  Positron Annihilation  Semiconductor Thin Films  Vacancies (Crystal)  Wide Band Gap Semiconductors  Zinc Compounds  Semiconductors  Emission  Origin  Diodes  
Fine structural splitting and exciton spin relaxation in single InAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 10, 页码: Art. No. 103516
Authors:  Dou XM;  Sun BQ;  Xiong YH;  Niu ZC;  Ni HQ;  Xu ZY;  Dou XM CAS SKLSM Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address:
Adobe PDF(208Kb)  |  Favorite  |  View/Download:1332/611  |  Submit date:2010/03/08
Deformation  Excitons  Fine Structure  Iii-v Semiconductors  Indium Compounds  Phonons  Photoluminescence  Semiconductor Quantum Dots  Spin Dynamics  
Hole Spin Relaxation in an Ultrathin InAs Monolayer 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 5, 页码: Art. No. 057303
Authors:  Li T;  Zhu YG;  Zhang XH;  Ma SS;  Wang PF;  Niu ZC;  Li T Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct Beijing 100083 Peoples R China. E-mail Address:
Adobe PDF(366Kb)  |  Favorite  |  View/Download:969/264  |  Submit date:2010/03/08
Semiconductor Quantum Dots  Gaas  Wells  Dynamics  Excitons  
Optical study of lateral carrier transfer in (In,Ga)As/GaAs quantum-dot chains 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 93, 期号: 1, 页码: Art. No. 011107
Authors:  Wang, BR;  Sun, BQ;  Ji, Y;  Dou, XM;  Xu, ZY;  Wang, ZM;  Salamo, GJ;  Wang, BR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址:
Adobe PDF(194Kb)  |  Favorite  |  View/Download:1024/345  |  Submit date:2010/03/08
Localized States  Islands  Wires  Superlattices  Organization  Gaas(100)  Excitons  Growth  Decay  Gaas  
Photoluminescence energy and fine structure splitting in single quantum dots by uniaxial stress 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 3, 页码: 1120-1123
Authors:  Dou, XM;  Sun, BQ;  Wang, BR;  Ma, SS;  Zhou, R;  Huang, SS;  Ni, HQ;  Niu, ZC;  Dou, XM, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
Adobe PDF(301Kb)  |  Favorite  |  View/Download:998/326  |  Submit date:2010/03/08
Exchange Interaction  Gaas  Pressure  Dependence  Amplifiers  Electron  Emission  Excitons  Photons  Spectra  
Lifetime study of N impurity states in GaAs1-xNx (x=0.1%) under hydrostatic pressure 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 20, 页码: Art.No.201917
Authors:  Wang WJ;  Yang XD;  Ma BS;  Sun Z;  Su FH;  Ding K;  Xu ZY;  Li GH;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW;  Wang, WJ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail:
Adobe PDF(78Kb)  |  Favorite  |  View/Download:1654/529  |  Submit date:2010/04/11
Pair Luminescence  Gap-n  Gaas  Excitons  Alloy  
Electronic structure and g factors of narrow-gap zinc-blende nanowires and nanorods 期刊论文
EUROPEAN PHYSICAL JOURNAL B, 2006, 卷号: 52, 期号: 1, 页码: 133-142
Authors:  Zhang XW (Zhang X. W.);  Zhu YH (Zhu Y. H.);  Xia JB (Xia J. B.);  Zhang, XW, Chinese Ctr Adv Sci & Technol, World Lab, POB 8730, Beijing 100080, Peoples R China. E-mail:
Adobe PDF(876Kb)  |  Favorite  |  View/Download:734/215  |  Submit date:2010/04/11
Semiconductor Nanorods  Excitons  Indium  Wire  Insb  
Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots 期刊论文
THIN SOLID FILMS, 2006, 卷号: 498, 期号: 1-2, 页码: 188-192
Authors:  Kong LM;  Cai JF;  Wu ZY;  Gong Z;  Niu ZC;  Feng ZC;  Feng, ZC, Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei, Taiwan. E-mail:
Adobe PDF(152Kb)  |  Favorite  |  View/Download:992/414  |  Submit date:2010/04/11
Time-resolved Photoluminescence  Inas Self-assembled Qds  Migration Of Carriers  1.3 Mu-m  Dependent Radiative Decay  Thermal Redistribution  Excitons  Recombination  Relaxation  Lifetimes  Emission  Epitaxy  Lasers