A V-shaped module technique for promoting generation photocurrent density of silicon solar cells

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	A V-shaped module technique for promoting generation photocurrent density of silicon solar cells
	Li, JM; Chong, M; Duan, XF; Xu, JD; Gao, M; Wang, FL; Li, JM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
	2004
会议名称	5th International Conference on Thin Film Physics and Applications
会议录名称	FIFTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)
页码	5774: 466-469
会议日期	MAY 31-JUN 02, 2004
会议地点	Shanghai, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-5755-8
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	A V-shaped solar cell module consists of two tilted mono-crystalline cells [J. Li, China Patent No. 200410007708.6 (March, 2004)]. The angle included between the two tilted cells is 90 degrees. The two cells were fabricated by using polished silicon wafers. The scheme of both-side polished wafers has been proposed to reduce optical loss. Compared to solar cells in a planar way, the V-shaped structure enhances external quantum efficiency and leads to an increase of 15% in generation photocurrent density. The following three kinds of trapped photons are suggested to contribute to the increase: (1) infrared photons converted from visible photons due to a transformation mechanism, (2) photons reflected from top contact metal, and (3) a residual reflection which can not be eliminated by an antireflection coating.
关键词	Silicon Solar Cells V-shaped Structure
学科领域	半导体材料
主办者	Chinese Phys Soc.; Shanghai Phys Soc.; Natl Nat Sci Fdn China.; E China Normal Univ, Sch Informat Sci & Technol.; Fudan Univ, Appl Surface Phys Lab.; Natl Lab Infrared Phys.; CAS, Shanghai Inst Tech Phys.; E China Normal Univ, Key Lab Opt & Magnet Resonance Spectroscopy.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10068
专题	中国科学院半导体研究所（2009年前）
通讯作者	Li, JM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Li, JM,Chong, M,Duan, XF,et al. A V-shaped module technique for promoting generation photocurrent density of silicon solar cells[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2004:5774: 466-469.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
2417.pdf（135KB）			限制开放	--	请求全文