SEMI OpenIR

Browse/Search Results:  1-10 of 21 Help

  Show only claimed items
Selected(0)Clear Items/Page:    Sort:
Asymmetric resistive switching effect in?ZnO/Nb:SrTiO 3 heterojunctions 期刊论文
Applied Physics A, 2018, 卷号: 124, 页码: 189
Authors:  Caihong Jia ;  Yong Ren ;  Guang Yang ;   Jiachen Li ;   Yonghai Chen ;  Weifeng Zhang
Adobe PDF(1040Kb)  |  Favorite  |  View/Download:1/0  |  Submit date:2019/11/14
Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO 3 /Nb:SrTiO 3 Epitaxial Heterojunctions 期刊论文
Nanoscale Research Letters, 2018, 卷号: 13, 页码: 102
Authors:  Caihong Jia ;   Jiachen Li ;   Guang Yang ;   Yonghai Chen ;   Weifeng Zhang
Adobe PDF(2571Kb)  |  Favorite  |  View/Download:1/0  |  Submit date:2019/11/14
Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect 期刊论文
Appl. Phys. Lett., 2017, 卷号: 111, 页码: 113506
Authors:  Caihong Jia;  Xiaoqian Yin;  Guang Yang;  Yonghui Wu;  Jiachen Li;  Yonghai Chen;  Weifeng Zhang
Adobe PDF(1256Kb)  |  Favorite  |  View/Download:117/1  |  Submit date:2018/05/23
Enhancing rectification of Nb:SrTiO3/ZnO heterojunctions by magnetic field 期刊论文
Vacuum, 2017, 卷号: 142, 页码: 66-71
Authors:  Ming Han;  Yong Ren;  Jiachen Li;  Yonghai Chen;  Weifeng Zhang;  Caihong Jia
Adobe PDF(1984Kb)  |  Favorite  |  View/Download:64/2  |  Submit date:2018/05/23
Modified synthesis of FeS2 quantum dots for hybrid bulk-heterojunction solar cells 期刊论文
Materials Letters, 2015, 卷号: 157, 页码: 235–238
Authors:  Ping Yu;  Shengchun Qu;  Caihong Jia;  Kong Liu;  Furui Tan
Adobe PDF(1796Kb)  |  Favorite  |  View/Download:167/2  |  Submit date:2016/03/23
Control of epitaxial relationships of ZnO/SrTiO3 heterointerfaces by etching the substrate surface 期刊论文
NANOSCALE RESEARCH LETTERS, 2013, 卷号: 8, 页码: 23
Authors:  Jia, Caihong;  Chen, Yonghai;  Liu, Xianglin;  Yang, Shaoyan;  Zhang, Weifeng;  Wang, Zhanguo
Adobe PDF(1102Kb)  |  Favorite  |  View/Download:727/186  |  Submit date:2013/09/22
Spin splitting modulated by uniaxial stress in InAs nanowires 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 卷号: 23, 期号: 1, 页码: Art. No. 015801
Authors:  Liu GH (Liu Genhua);  Chen YH (Chen Yonghai);  Jia CH (Jia Caihong);  Hao GD (Hao Guo-Dong);  Wang ZG (Wang Zhanguo);  Liu, GH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@red.semi.ac.cn
Adobe PDF(778Kb)  |  Favorite  |  View/Download:1877/501  |  Submit date:2010/12/28
Narrow-gap Semiconductor  Inversion-asymmetry  Quantum Dots  Band  States  
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 319, 期号: 1, 页码: 114-117
Authors:  Zhang BA;  Song HP;  Wang J;  Jia CH;  Liu JM;  Xu XQ;  Liu XL;  Yang SY;  Zhu QS;  Wang ZG;  Zhang, BA, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhangbiao@semi.ac.cn
Adobe PDF(611Kb)  |  Favorite  |  View/Download:1307/389  |  Submit date:2011/07/05
Anisotropy  Crystal Morphology  Metalorganic Chemical Vapor Deposition  A-plane Inn  Indium Nitride  Movpe Growth  Cubic Inn  Sapphire  Gan  Mbe  
Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
Nanoscale Research Letters, 2011, 卷号: 6, 页码: 1-5
Authors:  Jia, Caihong;  Chen, Yonghai;  Guo, Yan;  Liu, Xianglin;  Yang, Shaoyan;  Zhang, Weifeng;  Wang, Zhanguo;  Chen, Y.(yhchen@semi.ac.cn)
Adobe PDF(288Kb)  |  Favorite  |  View/Download:922/265  |  Submit date:2012/06/14
Photons  Valence Bands  x Ray Photoelectron Spectroscopy  
Valence band offset of ZnO/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 卷号: 99, 期号: 2, 页码: 511-514
Authors:  Jia CH;  Chen YH;  Zhou XL;  Yang AL;  Zheng GL;  Liu;  XL;  Yang SY;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
Adobe PDF(359Kb)  |  Favorite  |  View/Download:1636/600  |  Submit date:2010/06/04
Batio3  Srtio3