SEMI OpenIR  > 中科院半导体材料科学重点实验室
Asymmetric resistive switching effect in?ZnO/Nb:SrTiO 3 heterojunctions
Caihong Jia ;  Yong Ren ;  Guang Yang ;   Jiachen Li ;   Yonghai Chen ;  Weifeng Zhang
2018
Source PublicationApplied Physics A
Volume124Pages:189
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29094
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Caihong Jia ;Yong Ren ;Guang Yang ; Jiachen Li ; Yonghai Chen ;Weifeng Zhang. Asymmetric resistive switching effect in?ZnO/Nb:SrTiO 3 heterojunctions[J]. Applied Physics A,2018,124:189.
APA Caihong Jia ;Yong Ren ;Guang Yang ; Jiachen Li ; Yonghai Chen ;Weifeng Zhang.(2018).Asymmetric resistive switching effect in?ZnO/Nb:SrTiO 3 heterojunctions.Applied Physics A,124,189.
MLA Caihong Jia ;Yong Ren ;Guang Yang ; Jiachen Li ; Yonghai Chen ;Weifeng Zhang."Asymmetric resistive switching effect in?ZnO/Nb:SrTiO 3 heterojunctions".Applied Physics A 124(2018):189.
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