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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中科院半导体材料科学... [2]
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High performance continuous-wave InP-based 2.1 µm superluminescent diode with InGaAsSb quantum well and cavity structure suppression
期刊论文
APPLIED PHYSICS LETTERS, 2018, 卷号: 113, 页码: 161107
Authors:
Dongbo Wang
;
Jinchuan Zhang
;
Chuncai Hou
;
Yue Zhao
;
Fengmin Cheng
;
Xuefeng Jia
;
Shenqiang Zhai
;
Ning Zhuo
;
Junqi Liu
;
Fengqi Liu
;
Zhanguo Wang
Adobe PDF(2645Kb)
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View/Download:2/0
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Submit date:2019/11/12
Improved performance of InP-based 2.1 µm InGaAsSb quantum well lasers using Sb as a surfactant
期刊论文
APPLIED PHYSICS LETTERS, 2018, 卷号: 113, 页码: 251101
Authors:
Dongbo Wang
;
Ning Zhuo
;
Yue Zhao
;
Fengmin Cheng
;
Shouzhu Niu
;
Jinchuan Zhang, Shenqiang Zhai, Lijun Wang
;
Shuman Liu
;
Fengqi Liu
;
Zhanguo Wang
Adobe PDF(1828Kb)
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View/Download:1/0
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Submit date:2019/11/12