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High performance continuous-wave InP-based 2.1 µm superluminescent diode with InGaAsSb quantum well and cavity structure suppression
Dongbo Wang;   Jinchuan Zhang;   Chuncai Hou;   Yue Zhao;   Fengmin Cheng;  Xuefeng Jia;   Shenqiang Zhai;   Ning Zhuo;   Junqi Liu;   Fengqi Liu;   Zhanguo Wang
2018
Source PublicationAPPLIED PHYSICS LETTERS
Volume113Pages:161107
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28961
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Dongbo Wang; Jinchuan Zhang; Chuncai Hou; Yue Zhao; Fengmin Cheng;Xuefeng Jia; Shenqiang Zhai; Ning Zhuo; Junqi Liu; Fengqi Liu; Zhanguo Wang. High performance continuous-wave InP-based 2.1 µm superluminescent diode with InGaAsSb quantum well and cavity structure suppression[J]. APPLIED PHYSICS LETTERS,2018,113:161107.
APA Dongbo Wang; Jinchuan Zhang; Chuncai Hou; Yue Zhao; Fengmin Cheng;Xuefeng Jia; Shenqiang Zhai; Ning Zhuo; Junqi Liu; Fengqi Liu; Zhanguo Wang.(2018).High performance continuous-wave InP-based 2.1 µm superluminescent diode with InGaAsSb quantum well and cavity structure suppression.APPLIED PHYSICS LETTERS,113,161107.
MLA Dongbo Wang; Jinchuan Zhang; Chuncai Hou; Yue Zhao; Fengmin Cheng;Xuefeng Jia; Shenqiang Zhai; Ning Zhuo; Junqi Liu; Fengqi Liu; Zhanguo Wang."High performance continuous-wave InP-based 2.1 µm superluminescent diode with InGaAsSb quantum well and cavity structure suppression".APPLIED PHYSICS LETTERS 113(2018):161107.
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