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Improved performance of InP-based 2.1 µm InGaAsSb quantum well lasers using Sb as a surfactant
Dongbo Wang;   Ning Zhuo;   Yue Zhao;   Fengmin Cheng;   Shouzhu Niu;   Jinchuan Zhang, Shenqiang Zhai, Lijun Wang;   Shuman Liu;   Fengqi Liu;   Zhanguo Wang
2018
Source PublicationAPPLIED PHYSICS LETTERS
Volume113Pages:251101
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28962
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Dongbo Wang; Ning Zhuo; Yue Zhao; Fengmin Cheng; Shouzhu Niu; Jinchuan Zhang, Shenqiang Zhai, Lijun Wang; Shuman Liu; Fengqi Liu; Zhanguo Wang. Improved performance of InP-based 2.1 µm InGaAsSb quantum well lasers using Sb as a surfactant[J]. APPLIED PHYSICS LETTERS,2018,113:251101.
APA Dongbo Wang; Ning Zhuo; Yue Zhao; Fengmin Cheng; Shouzhu Niu; Jinchuan Zhang, Shenqiang Zhai, Lijun Wang; Shuman Liu; Fengqi Liu; Zhanguo Wang.(2018).Improved performance of InP-based 2.1 µm InGaAsSb quantum well lasers using Sb as a surfactant.APPLIED PHYSICS LETTERS,113,251101.
MLA Dongbo Wang; Ning Zhuo; Yue Zhao; Fengmin Cheng; Shouzhu Niu; Jinchuan Zhang, Shenqiang Zhai, Lijun Wang; Shuman Liu; Fengqi Liu; Zhanguo Wang."Improved performance of InP-based 2.1 µm InGaAsSb quantum well lasers using Sb as a surfactant".APPLIED PHYSICS LETTERS 113(2018):251101.
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