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Recent research results on deep level defects in semi-insulating InP - Application to improve material quality 会议论文
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, NJ, MAY 07-11, 2006
Authors:  Zhao, YW (Zhao, Youwen);  Dong, ZY (Dong, Zhiyuan);  Dong, HW (Dong, Hongwei);  Sun, NF (Sun, Niefeng);  Sun, TN (Sun, Tongnian);  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
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Stimulated Current Spectroscopy  Current Transient Spectroscopy  Fe-doped Inp  Point-defects  Compensation  Temperature  Donors  Traps  
磷化铟单晶片的抛光工艺 专利
专利类型: 发明, 申请日期: 2003-03-12, 公开日期: 2009-06-04, 2009-06-11
Inventors:  董宏伟;  赵有文;  杨子祥;  焦景华
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非掺杂磷化铟(InP)的高温退火研究— 半绝缘材料的点缺陷、制备、性质、应用对比 学位论文
, 北京: 中国科学院半导体研究所, 2003
Authors:  董宏伟
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非掺半绝缘磷化铟晶片的制备及其均匀性 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 1, 页码: 53-56
Authors:  董宏伟;  赵有文;  焦景华;  赵建群;  林兰英
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Preparation of Semi-Insulating Material by Annealing Undoped InP 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 3, 页码: 285-289
Authors:  Zhao Youwen;  Dong Hongwei;  Jiao Jinghua;  Zhao Jianqun;  Lin Lanying;  Sun Niefeng;  Sun Tongnian
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非原生掺杂半绝缘磷化铟(InP)及其应用对比 期刊论文
科学通报, 2002, 卷号: 47, 期号: 23, 页码: 1761-1762
Authors:  董宏伟;  赵有文;  焦景华;  曾一平;  李晋闽;  林兰英
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