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Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 2, 页码: Article no.23716
Authors:  Ying J;  Zhang XW;  Yin ZG;  Tan HR;  Zhang SG;  Fan YM;  Ying, J, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. xwzhang@semi.ac.cn
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High-pressure Synthesis  Vapor-deposition  Nucleation  Emission  Diamond  Growth  
降低立方氮化硼薄膜应力的方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-03-17, 2010-08-12
Inventors:  范亚明;  张兴旺;  谭海仁;  陈诺夫
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一种改善ZnO薄膜欧姆接触的方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-03-31, 2010-08-12
Inventors:  张兴旺;  蔡培锋;  游经碧;  范亚明;  高 云;  陈诺夫
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一种立方氮化硼薄膜n型掺杂的方法 专利
专利类型: 发明, 申请日期: 2009-05-27, 公开日期: 3996
Inventors:  张兴旺;  范亚明;  陈诺夫 
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一种增强氧化锌薄膜蓝光发射的方法 专利
专利类型: 发明, 申请日期: 2009-05-27, 公开日期: 3996
Inventors:  张兴旺;  游经碧;  范亚明;  屈 盛;  陈诺夫
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Comparison and combination of several stress relief methods for cubic boron nitride films deposited by ion beam assisted deposition 期刊论文
SURFACE & COATINGS TECHNOLOGY, 2009, 卷号: 203, 期号: 10-11, 页码: 1452-1456
Authors:  Fan YM;  Zhang XW;  You JB;  Tan HR;  Chen NF;  Zhang XW Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China. E-mail Address: xwzhang@semi.ac.cn
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Cubic Boron Nitride  Stress Relaxation  Ion Beam Assisted depositIon  Fourier Transformed Infrared Spectroscopy  
Effects of crystalline quality on the ultraviolet emission and electrical properties of the ZnO films deposited by magnetron sputtering 期刊论文
APPLIED SURFACE SCIENCE, 2009, 卷号: 255, 期号: 11, 页码: 5876-5880
Authors:  You JB;  Zhang XW;  Fan YM;  Yin ZG;  Cai F;  Chen NF;  Zhang XW Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci A35 Qinghua Donglu Beijing 100083 Peoples R China. E-mail Address: xwzhang@semi.ac.cn
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Crystal Quality  Rf Magnetron Sputtering  Zinc Oxide  Semiconducting Ii-vi Materials  
Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si(001) 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 5, 页码: Art. No. 056801
Authors:  Fan YM;  Zhang XW;  You JB;  Ying J;  Tan HR;  Chen NF;  Zhang XW Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China. E-mail Address: xwzhang@semi.ac.cn
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Bn Thin-films  Refractive-index  Ellipsometry  Nucleation  Diamond  Density  
宽禁带立方氮化硼薄膜的制备与掺杂研究 学位论文
, 北京: 中国科学院半导体研究所, 2009
Authors:  范亚明
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Effects of the morphology of ZnO/Ag interface on the surface-plasmon-enhanced emission of ZnO films 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 卷号: 41, 期号: 20, 页码: Art. No. 205101
Authors:  You JB;  Zhang XW;  Fan YM;  Yin ZG;  Cai PF;  Chen NF;  Zhang, XW, CAS, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: xwzhang@semi.ac.cn
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Light-emitting-diodes