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嵌入 InAs 量子点的 GaAs 电池的光伏特性研究 学位论文
, 北京: 中国科学院研究生院, 2013
Authors:  尚向军
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Strain-driven synthesis of self-catalyzed branched GaAs nanowires 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 16, 页码: 163115
Authors:  Zha, Guowei;  Li, Mifeng;  Yu, Ying;  Wang, Lijuan;  Xu, Jianxing;  Shang, Xiangjun;  Ni, Haiqiao;  Niu, Zhichuan
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嵌入InAs量子点的GaAs电池的光伏特性研究 学位论文
, 北京: 中国科学院研究生院, 2012
Authors:  尚向军
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Enhanced tunneling in the GaAs p+-n+junction by embedding InAs quantum dots 期刊论文
Semiconductor Science and Technology, 2012, 卷号: 27, 期号: 11, 页码: 115010
Authors:  Wang, Lijuan;  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Yu, Ying;  Zha, Guowei;  Ni, Haiqiao;  Niu, Zhichuan
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Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 卷号: 27, 期号: 11, 页码: 115010
Authors:  Wang LJ (Wang, Lijuan);  He JF (He, Jifang);  Shang XJ (Shang, Xiangjun);  Li MF (Li, Mifeng);  Yu Y (Yu, Ying);  Zha GW (Zha, Guowei);  Ni HQ (Ni, Haiqiao);  Niu ZC (Niu, Zhichuan)
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Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43004
Authors:  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Zhu, Yan;  Chang, Xiuying;  Ni, Haiqiao;  Xu, Yingqiang;  Niu, Zhichuan;  He, J.(hejifang@semi.ac.cn)
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Atomic Force Microscopy  Buffer Layers  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Germanium  Growth Temperature  High Resolution Transmission Electron Microscopy  Molecular Beam Epitaxy  Molecular Beams  Semiconducting Gallium  Semiconductor Device Structures  Semiconductor Quantum Wells  
在衬底上生长异变缓冲层的方法 专利
专利类型: 发明, 专利号: CN102194671A, 公开日期: 2012-08-29, 2011-09-21, 2012-08-29
Inventors:  贺继方;  尚向军;  倪海桥;  王海莉;  李密峰;  朱岩;  王莉娟;  喻颖;  贺正宏;  徐应强;  牛智川
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自组织单量子点的定位方法及装置 专利
专利类型: 发明, 公开日期: 2013-06-19
Inventors:  尚向军;  倪海桥;  査国伟;  喻颖;  李密峰;  王莉娟;  徐建星;  牛智川
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一种光纤与光电子器件垂直耦合的方法 专利
专利类型: 发明, 公开日期: 2013-10-09
Inventors:  査国伟;  牛智川;  倪海桥;  李密锋;  喻颖;  王莉娟;  徐建星;  尚向军;  贺振宏
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在GaAs纳米线侧壁利用纳米环作为掩膜生长量子点的方法 专利
专利类型: 发明, 公开日期: 2013-10-23
Inventors:  査国伟;  李密锋;  喻颖;  王莉娟;  徐建星;  尚向军;  倪海桥;  贺振宏;  牛智川
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