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Enhanced tunneling in the GaAs p+-n+junction by embedding InAs quantum dots 期刊论文
Semiconductor Science and Technology, 2012, 卷号: 27, 期号: 11, 页码: 115010
Authors:  Wang, Lijuan;  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Yu, Ying;  Zha, Guowei;  Ni, Haiqiao;  Niu, Zhichuan
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Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application 期刊论文
MATERIALS, 2012, 卷号: 5, 期号: 12, 页码: 2917-2926
Authors:  Shi YB (Shi, Yunbo);  Guo H (Guo, Hao);  Ni HQ (Ni, Haiqiao);  Xue CY (Xue, Chenyang);  Niu ZC (Niu, Zhichuan);  Tang J (Tang, Jun);  Liu J (Liu, Jun);  Zhang WD (Zhang, Wendong);  He JF (He, Jifang);  Li MF (Li, Mifeng);  Yu Y (Yu, Ying)
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Si基III-V族半导体异质兼容低维材料的分子束外延生长 学位论文
, 北京: 中国科学院研究生院, 2012
Authors:  贺继方
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Si基iii-v族半导体  Inas/gaas量子点  半导体纳米线  自催化生长  分子束外延  
Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 卷号: 27, 期号: 11, 页码: 115010
Authors:  Wang LJ (Wang, Lijuan);  He JF (He, Jifang);  Shang XJ (Shang, Xiangjun);  Li MF (Li, Mifeng);  Yu Y (Yu, Ying);  Zha GW (Zha, Guowei);  Ni HQ (Ni, Haiqiao);  Niu ZC (Niu, Zhichuan)
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高稳定线性调谐GaAs基波长可调谐共振腔增强型探测器 期刊论文
物理学报, 2012, 卷号: 61, 期号: 1, 页码: 018502-1-018502-5
Authors:  王杰,韩勤,杨晓红,倪海桥,贺继方,王秀平
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Preparation and photoluminescence study of patterned substrate quantum wires 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 2, 页码: Article no.20703
Authors:  Wang XP;  Yang XH;  Han Q;  Ju YL;  Du Y;  Zhu B;  Wang J;  Ni HQ;  He JF;  Wang GW;  Niu ZC;  Wang, XP, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. xpwang@semi.ac.cn
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V-groove Substrate  Quantum Wires  Gaas  Epitaxial-growth  Transistor  
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43004
Authors:  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Zhu, Yan;  Chang, Xiuying;  Ni, Haiqiao;  Xu, Yingqiang;  Niu, Zhichuan;  He, J.(hejifang@semi.ac.cn)
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Atomic Force Microscopy  Buffer Layers  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Germanium  Growth Temperature  High Resolution Transmission Electron Microscopy  Molecular Beam Epitaxy  Molecular Beams  Semiconducting Gallium  Semiconductor Device Structures  Semiconductor Quantum Wells  
Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 103, 期号: 2, 页码: 335-341
Authors:  Shang XJ;  He JF;  Wang HL;  Li MF;  Zhu Y;  Niu ZC;  Fu Y;  Shang, XJ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. xjshang@semi.ac.cn;  fyg@theochem.kth.se
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Intermediate-band  Transitions  
High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 20, 页码: Article no.201104
Authors:  Liu SQ;  Han Q;  Zhu B;  Yang XH;  Ni HQ;  He JF;  Wang X;  Li MF;  Zhu Y;  Wang J;  Wang XP;  Niu ZC;  Liu, SQ, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. sqliu@semi.ac.cn;  hanqin@red.semi.ac.cn
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I-n Photodiodes  
图形衬底量子线生长制备与荧光特性研究 期刊论文
物理学报, 2011, 卷号: 60, 期号: 2, 页码: 020703-1-020703-5
Authors:  王秀平;  杨晓红;  韩勤;  鞠研玲;  杜云;  朱彬;  王杰;  倪海桥;  贺继方;  王国伟;  牛智川
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