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Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 10, 页码: Article no.103507
Authors:  Wei Y;  Ma WQ;  Huang JL;  Zhang YH;  Huo YH;  Cui K;  Chen LH;  Shi YL;  Ma, WQ, Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, POB 912, Beijing 100083, Peoples R China. wqma@semi.ac.cn
Adobe PDF(286Kb)  |  Favorite  |  View/Download:1275/313  |  Submit date:2011/07/06
Mu-m  Detector  Temperature  Growth  
Double crystal X-ray diffraction study of MBE self-organized InAs quantum dots 期刊论文
SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY, 1998, 卷号: 41, 期号: 2, 页码: 172-176
Authors:  Wang YT;  Zhuang Y;  Ma WQ;  Wang W;  Yang XP;  Chen ZG;  Jiang DS;  Zheng HZ;  Wang YT,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(313Kb)  |  Favorite  |  View/Download:965/341  |  Submit date:2010/08/12
Quantum Dots  X-ray Diffraction  Growth  Dynamic Theory  Photoluminescence  Molecular-beam Epitaxy  Resolution  Gaas(100)  Gaas