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Dark current mechanism of unpassivated mid wavelength type II InAs/GaSb superlattice infrared photodetector 期刊论文
CHINESE SCIENCE BULLETIN, 2014, 卷号: 59, 期号: 28, 页码: 3696-3700
Authors:  Li, Q;  Ma, WQ;  Zhang, YH;  Cui, K;  Huang, JL;  Wei, Y;  Liu, K;  Cao, YL;  Wang, WY;  Liu, YL;  Jin, P
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Specific Detection of Alpha-Fetoprotein Using AlGaAs/GaAs High Electron Mobility Transistors 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2014, 卷号: 35, 期号: 3, 页码: 333-335
Authors:  Ding, K;  Wang, CY;  Zhang, BT;  Zhang, Y;  Guan, M;  Cui, LJ;  Zhang, YW;  Zeng, YP;  Lin, Z;  Huang, F
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量子点存储器材料与器件研究 学位论文
, 北京: 中国科学院研究生院, 2013
Authors:  崔凯
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Mid Wavelength Type II InAs/GaSb Superlattice Photodetector Using SiOxNy Passivation 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 51, 期号: 7,Part 1, 页码: 74002
Authors:  Huang, JL;  Ma, WQ;  Cao, YL;  Wei, Y;  Zhang, YH;  Cui, K;  Deng, GR;  Shi, YL
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Narrow-band long-/very-long wavelength two-color type-II InAs/GaSb superlattice photodetector by changing the bias polarity 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 100, 期号: 17, 页码: 173511
Authors:  Zhang, YH;  Ma, WQ;  Wei, Y;  Cao, YL;  Huang, JL;  Cui, K;  Guo, XL
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Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 mu m light emission at room temperature 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2012, 卷号: 45, 页码: 173-176
Authors:  Cui K (Cui, Kai);  Ma WQ (Ma, Wenquan);  Huang JL (Huang, Jianliang);  Wei Y (Wei, Yang);  Zhang YH (Zhang, Yanhua);  Cao YL (Cao, Yulian);  Gu YX (Gu, Yongxian);  Yang T (Yang, Tao)
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How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2-3 mu m 期刊论文
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2012, 卷号: 48, 期号: 10, 页码: 1322-1326
Authors:  Huang JL (Huang, Jianliang);  Ma WQ (Ma, Wenquan);  Wei Y (Wei, Yang);  Zhang YH (Zhang, Yanhua);  Cui K (Cui, Kai);  Cao YL (Cao, Yulian);  Guo XL (Guo, Xiaolu);  Shao J (Shao, Jun)
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Comprehensive thermal characterization using ruby R fluorescence lines of sapphire and GaNE(2)-high Raman mode from Raman spectra in high-power flip-chip InGaN/GaN LEDs 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 35, 页码: 355101
Authors:  Cui M;  Zhou TF;  Wang MR;  Huang J;  Huang HJ;  Zhang JP;  Xu K;  Yang H;  Cui, M (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China, tfzhou2007@sinano.ac.cn;  kxu2006@sinano.ac.cn
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Light-emitting-diodes  Temperature-measurements  Gan  Scattering  Dependence  Junction  Phonons  Aln  
Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 10, 页码: Article no.103501
Authors:  Huang JL;  Ma WQ;  Wei Y;  Zhang YH;  Huo YH;  Cui K;  Chen LH;  Ma, WQ, Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, POB 912, Beijing 100083, Peoples R China. wqma@semi.ac.cn
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Dual-band quantum well infrared photodetectors with two ohmic contacts 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 9, 页码: 98401
Authors:  Huo YH;  Ma WQ;  Zhang YH;  Huang JL;  Wei Y;  Cui K;  Chen LH;  Ma, WQ (reprint author), Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, Beijing 100083, Peoples R China, wqma@semi.ac.cn
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Focal-plane Arrays  Simultaneously Working  Mu-m  Detector