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Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 6, 页码: 3762-3764
Authors:  Xu DP;  Wang YT;  Yang H;  Li SF;  Zhao DG;  Fu Y;  Zhang SM;  Wu RH;  Jia QJ;  Zheng WL;  Jiang XM;  Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(45Kb)  |  Favorite  |  View/Download:1018/331  |  Submit date:2010/08/12
Molecular-beam Epitaxy  Nitride Semiconductors  Stress  
Room-temperature optical transitions in Mg-doped cubic GaN/GaAs(100) grown by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 87, 期号: 4, 页码: 2064-2066
Authors:  Xu DP;  Yang H;  Zhao DG;  Li SF;  Wu RH;  Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(51Kb)  |  Favorite  |  View/Download:812/279  |  Submit date:2010/08/12
Molecular-beam Epitaxy  Gallium Nitride  Gan Films