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Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power 期刊论文
Chinese Optics Letters, 2006, 卷号: 4, 期号: 7, 页码: 413-415
Authors:  Qin Han;  Zhichuan Niu;  Haiqiao Ni;  Shiyong Zhang;  Xiaohong Yang;  Yun Du;  Cunzhu Tong;  Huan Zhao;  Yingqiang Xu;  Hongling Peng;  Ronghan Wu
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Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 9, 页码: 1860-1864
Authors:  Niu Zhichuan;  Han Qin;  Ni Haiqiao;  Yang Xiaohong;  Xu Yingqiang;  Du Yun;  Zhang Shiyong;  Peng Hongling;  Zhao Huan;  Wu Donghai;  Li Shuying;  He Zhenhong;  Ren Zhengwei;  Wu Ronghan
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Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy 期刊论文
ACTA PHYSICA SINICA, 2005, 卷号: 54, 期号: 6, 页码: 2950-2954
Authors:  Xu XH;  Niu ZC;  Ni HQ;  Xu YQ;  Zhang W;  He ZH;  Han Q;  Wu RH;  Jiang DS;  Niu, ZC, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址:
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Molecular Beam Epitaxy  
分子束外延生长的(GaAs1-xSbx/InyGa1-yAs)/GaAs量子阱光致发光谱研究 期刊论文
物理学报, 2005, 卷号: 54, 期号: 6, 页码: 2950-2954
Authors:  徐晓华;  牛智川;  倪海桥;  徐应强;  张纬;  贺正宏;  韩勤;  吴荣汉;  江德生
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