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纳米折叠InGaN/GaN LED材料生长及器件特性 期刊论文
物理学报, 2011, 卷号: 60, 期号: 7, 页码: 076104-1-076104-4
Authors:  陈贵锋;  谭小动;  万尾甜;  沈俊;  郝秋艳;  唐成春;  朱建军;  刘宗顺;  赵德刚;  张书明
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T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablation 期刊论文
Applied Physics A: Materials Science and Processing, 2011, 页码: 1-5
Authors:  Du, Y.D.;  Cao, H.Z.;  Yan, W.;  Han, W.H.;  Liu, Y.;  Dong, X.Z.;  Zhang, Y.B.;  Jin, F.;  Zhao, Z.S.;  Yang, F.H.;  Duan, X.M.;  Han, W.H.(weihua@semi.ac.cn)
Adobe PDF(447Kb)  |  Favorite  |  View/Download:668/83  |  Submit date:2012/06/14
Ablation  Drain Current  Fabrication  Gallium Nitride  High Electron Mobility Transistors  Photoresists  Ultrashort Pulses