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Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in AlGaN/GaN heterostructures 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 4, 页码: 043702
Authors:  Jin, DD;  Wang, LS;  Yang, SY;  Zhang, LW;  Li, HJ;  Zhang, H;  Wang, JX;  Xiang, RF;  Wei, HY;  Jiao, CM;  Liu, XL;  Zhu, QS;  Wang, ZG
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半极性面氮化镓基发光二极管及其制备方法 专利
专利类型: 发明, 公开日期: 2016-09-12
Inventors:  项若飞;  汪连山;  赵桂娟;  金东东;  王建霞;  李辉杰;  张恒;  冯玉霞;  焦春美;  魏鸿源;  杨少延;  王占国
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