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Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:  Yuan HR;  Lu DC;  Liu XL;  Han PD;  Wang XH;  Wang D;  Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(302Kb)  |  收藏  |  浏览/下载：1407/179  |  提交时间：2010/10/29
Algan/gan Heterostructures  In-doping  2deg  Electron Sheet Density  X-ray Diffraction  Etching  Chemical-vapor-deposition  Molecular-beam Epitaxy  Phase Epitaxy  Mobility  Growth  Films  
Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD 会议论文
BLUE LASER AND LIGHT EMITTING DIODES II, CHIBA, JAPAN, SEP 29-OCT 02, 1998
作者:  Wang LS;  Yue GZ;  Liu XL;  Wang XH;  Wang CX;  Wang D;  Lu DC;  Wang ZG;  Wang LS Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
收藏  |  浏览/下载：986/0  |  提交时间：2010/10/29
Metastability  Antisite  
The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy 会议论文
BLUE LASER AND LIGHT EMITTING DIODES II, CHIBA, JAPAN, SEP 29-OCT 02, 1998
作者:  Wang LS;  Liu XL;  Zan YD;  Wang D;  Lu DC;  Wang ZG;  Wang LS Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：892/0  |  提交时间：2010/10/29
Sapphire  
The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 189, TOKUSHIMA CITY, JAPAN, OCT 27-31, 1997
作者:  Liu XL;  Wang LS;  Lu DC;  Wang D;  Wang XH;  Lin LY;  Liu XL Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlliu@red.semi.ac.cn
Adobe PDF(122Kb)  |  收藏  |  浏览/下载：1392/401  |  提交时间：2010/11/15
Movpe  Gan  Gan Buffer  Heavy Si-doping