Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures

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	Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures
	Yuan HR; Lu DC; Liu XL; Han PD; Wang XH; Wang D; Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
	2000
会议名称	International Workshop on Nitride Semiconductors (IWN 2000)
会议录名称	PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1
页码	923-926
会议日期	SEP 24-27, 2000
会议地点	NAGOYA, JAPAN
出版地	DAINI TOYOKAIJI BLDG 24-8 SHINBASHI 4 CHOME, TOKYO, 105-0004, JAPAN
出版者	INST PURE APPLIED PHYSICS
ISBN	4-900526-13-4
部门归属	chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要	Indium (In)-doping was applied in GaN layers during growth of AlGaN/GaN heterostructure with unintentionally doped or modulation Si-doped AlGaN layers. It was found that In-doping was effective in improving electron sheet density of two-dimensional-electron-gas (2DEG) in the heterostructures. Furthermore, In-doping also improved mobility in heterostructures with Si modulation-doped in AlGaN layers. The possible reasons were discussed. X-ray diffraction (XRD) and wet chemical etching revealed that crystalline quality of GaN was improved by In-doping. It was proposed that In-doping modified growth kinetics of GaN.
关键词	Algan/gan Heterostructures In-doping 2deg Electron Sheet Density X-ray Diffraction Etching Chemical-vapor-deposition Molecular-beam Epitaxy Phase Epitaxy Mobility Growth Films
学科领域	半导体物理
主办者	Japan Soc Appl Phys, Solid State Phys & Applicat Div.; Japan Soc Promot Sci, Comm Short Wavelength Optoelectr Devices, 162.; Japan Soc Promot Sci, Comm Convers Light & Elect, 125.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13745
专题	中国科学院半导体研究所（2009年前）
通讯作者	Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Yuan HR,Lu DC,Liu XL,et al. Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures[C]. DAINI TOYOKAIJI BLDG 24-8 SHINBASHI 4 CHOME, TOKYO, 105-0004, JAPAN:INST PURE APPLIED PHYSICS,2000:923-926.

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