The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy

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	The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy
	Liu XL; Wang LS; Lu DC; Wang D; Wang XH; Lin LY; Liu XL Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlliu@red.semi.ac.cn
	1998
会议名称	2nd International Conference on Nitride Semiconductors (ICNS 97)
会议录名称	JOURNAL OF CRYSTAL GROWTH, 189
页码	287-290
会议日期	OCT 27-31, 1997
会议地点	TOKUSHIMA CITY, JAPAN
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-0248
部门归属	chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要	The physical properties of low-temperature-deposited GaN buffer layers with different thicknesses grown by metal-organic vapor-phase epitaxy have been studied. A tentative model for the optimum thickness of buffer layer has been proposed. Heavily Si-doped GaN layers have been grown using silane as the dopant. The electron concentration of Si-doped GaN reached 1.7 x 10(20) cm(-3) with mobility 30 cm(2)/V s at room temperature. (C) 1998 Published by Elsevier Science B.V. All rights reserved.
关键词	Movpe Gan Gan Buffer Heavy Si-doping
学科领域	半导体材料
主办者	Japan Soc Appl Phys.; Inst Electr Informat & Commun Engineers.; IEEE.; Electron Devices Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15077
专题	中国科学院半导体研究所（2009年前）
通讯作者	Liu XL Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlliu@red.semi.ac.cn
推荐引用方式 GB/T 7714	Liu XL,Wang LS,Lu DC,et al. The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,1998:287-290.

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