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Pockels effect in GaN/Al-x,Gal(1-x)N superlattice with different quantum structures - art. no. 69841G 会议论文
THIN FILM PHYSICS AND APPLICATIONS,SIXTH INTERNATIONAL CONFERENCE, Shanghai, PEOPLES R CHINA, SEP 25-28, 2007
作者:  Chen P;  Lib SP;  Tu XG;  Zuo YH;  Zhao L;  Chen SW;  Li JC;  Lin W;  Chen HY;  Liu DY;  Kang JY;  Yu YD;  Yu JZ;  Wang QM;  Chen, P, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(386Kb)  |  收藏  |  浏览/下载：1719/355  |  提交时间：2010/03/09
Pockels Effect  
Fabrication of low cost Si-based tunable high performance resonant cavity enhanced photodetectors 会议论文
2004 IST IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, Hong Kong, PEOPLES R CHINA, SEP 29-OCT 01, 2004
作者:  Mao RW;  Li CB;  Zuo YH;  Cheng BW;  Teng XG;  Luo LP;  Yu JZ;  Wang QM;  Mao, RW, Chinese Acad Sci, Inst Semicond, State Key Joint Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(154Kb)  |  收藏  |  浏览/下载：1460/401  |  提交时间：2010/03/29
Quantum-efficiency  
The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells 会议论文
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, AACHEN, GERMANY, JUL 22-25, 2002
作者:  Jiang DS;  Liang XG;  Sun BQ;  Bian L;  Li LH;  Pan Z;  Wu RG;  Jiang DS Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(240Kb)  |  收藏  |  浏览/下载：1366/283  |  提交时间：2010/10/29
Luminescence  Localization  
MOVPE growth of GaN and LED on (111) MgAl2O4 会议论文
JOURNAL OF CRYSTAL GROWTH, 189, TOKUSHIMA CITY, JAPAN, OCT 27-31, 1997
作者:  Duan SK;  Teng XG;  Wang YT;  Li GH;  Jiang HX;  Han P;  Lu DC;  Duan SK Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: skduan@red.semi.ac.cn
Adobe PDF(150Kb)  |  收藏  |  浏览/下载：1416/364  |  提交时间：2010/11/15
Gan  Mgal2o4  Movpe  Led  Diodes