SEMI OpenIR

Browse/Search Results:  1-10 of 18 Help

Filters    
Selected(0)Clear Items/Page:    Sort:
The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 23, 页码: Art.No.235104
Authors:  Zhu, JH (Zhu, J. H.);  Wang, LJ (Wang, L. J.);  Zhang, SM (Zhang, S. M.);  Wang, H (Wang, H.);  Zhao, DG (Zhao, D. G.);  Zhu, JJ (Zhu, J. J.);  Liu, ZS (Liu, Z. S.);  Jiang, DS (Jiang, D. S.);  Qiu, YX (Qiu, Y. X.);  Yang, H (Yang, H.);  Zhu, JH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: smzhang@red.semi.ac.cn
Adobe PDF(829Kb)  |  Favorite  |  View/Download:1133/312  |  Submit date:2010/03/08
Multiple-quantum Wells  
The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates 期刊论文
CHINESE PHYSICS B, 2009, 卷号: 18, 期号: 10, 页码: 4413-4417
Authors:  Wu YX (Wu Yu-Xin);  Zhu JJ (Zhu Jian-Jun);  Zhao DG (Zhao De-Gang);  Liu ZS (Liu Zong-Shun);  Jiang DS (Jiang De-Sheng);  Zhang SM (Zhang Shu-Ming);  Wang YT (Wang Yu-Tian);  Wang H (Wang Hui);  Chen GF (Chen Gui-Feng);  Yang H (Yang Hui);  Zhu, JJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: jjzhu@red.semi.ac.cn
Adobe PDF(2560Kb)  |  Favorite  |  View/Download:941/228  |  Submit date:2010/03/08
Gan  
InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 10, 页码: Art.No.107302
Authors:  Wang H (Wang Hui);  Zhu JH (Zhu Ji-Hong);  Jiang DS (Jiang De-Sheng);  Zhu JJ (Zhu Jian-Jun);  Zhao DG (Zhao De-Gang);  Liu ZS (Liu Zong-Shun);  Zhang SM (Zhang Shu-Ming);  Yang H (Yang Hui);  Wang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangh@semi.ac.cn
Adobe PDF(415Kb)  |  Favorite  |  View/Download:799/255  |  Submit date:2010/03/08
Transport Characteristics  
Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 11, 页码: 7952-7957
Authors:  Zhang S (Zhang Shuang);  Zhao DG (Zhao De-Gang);  Liu ZS (Liu Zong-Shun);  Zhu JJ (Zhu Jian-Jun);  Zhang SM (Zhang Shu-Ming);  Wang YT (Wang Yu-Tian);  Duan LH (Duan Li-Hong);  Liu WB (Liu Wen-Bao);  Jiang DS (Jiang De-Sheng);  Yang H (Yang Hui);  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
Adobe PDF(245Kb)  |  Favorite  |  View/Download:1181/317  |  Submit date:2010/03/08
Gan  
Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 2, 页码: Art. No. 023104
Authors:  Zhang LQ;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Zhang SM;  Yang H;  Zhang LQ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: lqzhang@semi.ac.cn;  hyang@red.semi.ac.cn
Adobe PDF(937Kb)  |  Favorite  |  View/Download:1409/637  |  Submit date:2010/03/08
Aluminium Compounds  Claddings  Gallium Compounds  Iii-v Semiconductors  Indium Compounds  Quantum Well Lasers  Refractive Index  Waveguide Lasers  
Defect evolution and accompanied change of electrical properties during the GaN growth by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 卷号: 487, 期号: 1-2, 页码: 400-403
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Guo X;  Liu ZS;  Zhang SM;  Wang YT;  Yang H;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
Adobe PDF(304Kb)  |  Favorite  |  View/Download:1010/357  |  Submit date:2010/03/08
Nitride Materials  
GaN-based violet laser diodes grown on free-standing GaN substrate 期刊论文
CHINESE PHYSICS B, 2009, 卷号: 18, 期号: 12, 页码: 5350-5353
Authors:  Zhang LQ;  Zhang SM;  Jiang DS;  Wang H;  Zhu JJ;  Zhao DG;  Liu ZS;  Yang H;  Yang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: lqzhang@semi.ac.cn;  hyang@red.semi.ac.cn
Adobe PDF(759Kb)  |  Favorite  |  View/Download:744/266  |  Submit date:2010/04/05
Gan Laser Diode  Mounting Configuration  Active Region Temperature  Continuous-wave Operation  
Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 2, 页码: Art. No. 026102
Authors:  Sun X;  Jiang DS;  Liu WB;  Zhu JH;  Wang H;  Liu ZS;  Zhu JJ;  Wang YT;  Zhao DG;  Zhang SM;  You LP;  Ma RM;  Yang H;  Sun X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: xiansun@semi.ac.cn;  dsjiang@red.semi.ac.cn
Adobe PDF(280Kb)  |  Favorite  |  View/Download:1184/371  |  Submit date:2010/03/08
Light-emitting-diodes  Fundamental-band Gap  Nanowires  Heterostructures  Nanostructures  Mocvd  Polar  
Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 4, 页码: Art. No. 041901
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Wang H;  Zhang SM;  Wang YT;  Yang H;  Zhao DG Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
Adobe PDF(203Kb)  |  Favorite  |  View/Download:1319/438  |  Submit date:2010/03/08
Edge Dislocations  Gallium Compounds  Iii-v Semiconductors  Impurities  Photoluminescence  Semiconductor Doping  Semiconductor Thin Films  Silicon  Wide Band Gap Semiconductors  X-ray Diffraction  
Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 1, 页码: Art. No. 015108
Authors:  Liu WB;  Zhao DG;  Sun X;  Zhang S;  Jiang DS;  Wang H;  Zhang SM;  Liu ZS;  Zhu JJ;  Wang YT;  Duan LH;  Yang H;  Liu WB Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wbliu@semi.ac.cn;  dgzhao@red.semi.ac.cn
Adobe PDF(452Kb)  |  Favorite  |  View/Download:1231/496  |  Submit date:2010/03/08
Surface-morphology  Detectors  Growth