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Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 会议论文
JOURNAL OF CRYSTAL GROWTH, 318 (1): 572-575, Beijing, PEOPLES R CHINA, AUG 08-13, 2010
作者:  阎Zhou HY (Zhou Huiying);  Qu SC (Qu Shengchun);  Jin P (Jin Peng);  Xu B (Xu Bo);  Ye XL (Ye Xiaoling);  Liu JP (Liu Junpeng);  Wang ZG (Wang Zhanguo)
Adobe PDF(584Kb)  |  收藏  |  浏览/下载：2507/490  |  提交时间：2011/07/17
Dependence of transport properties in tunnel junction on boron doping 会议论文
Physica Status Solidi C-Current Topics in Solid State Physics VOL 7 NO 3-4, 7 (3-4): 1109-1111 2010, Utrecht, NETHERLANDS, AUG 23-28, 2009
作者:  Shi MJ;  Zeng XB;  Liu SY;  Peng WB;  Xiao HB;  Liao XB;  Wang ZG;  Kong GL
Adobe PDF(157Kb)  |  收藏  |  浏览/下载：1652/358  |  提交时间：2011/07/14